Investigation of Al 2O 3 and TiO 2 as gate insulators for 4H-SiC pulsed power devices

Q. Shui, M. S. Mazzola, X. Gu, C. W. Myles, M. A. Gundersen

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

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Engineering & Materials Science