Interstitial oxygen in elemental and compound semiconductors: Fundamental properties and trends

Chemistry

• Interstitial 100%
• Chemical Element 72%
• Semiconductor 72%
• Dioxygen 46%
• Hartree-Fock Method 43%
• Electron Correlation 37%
• Potential Energy Surface 30%
• Dipole Moment 29%
• Electronic Property 26%
• Molecular Cluster 20%
• Length 18%
• Energy 14%

Engineering & Materials Science

• Semiconductor materials 84%
• Oxygen 76%
• Electron correlations 61%
• Potential energy surfaces 52%
• Dipole moment 50%
• Electronic properties 48%
• Atoms 32%
• Defects 21%

Physics & Astronomy

• interstitials 81%
• trends 71%
• oxygen 57%
• molecular clusters 31%
• retraining 23%
• dipole moments 21%
• potential energy 20%
• electronic structure 17%
• estimates 13%
• defects 13%
• atoms 12%
• electrons 10%
• energy 7%