Interstitial Fe in Si and its interactions with hydrogen and shallow dopants

M. Sanati, N. Gonzalez Szwacki, S. K. Estreicher

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Abstract

The properties of interstitial iron in crystalline silicon and its interactions with hydrogen, shallow acceptors (B, Al, Ga, In, and Tl), and shallow donors (P and As) are calculated from first-principles in periodic supercells. The interactions between the {Fe,B} pair and interstitial hydrogen are also examined. The configurations, electronic structures, and binding energies are predicted. The relative stability of the trigonal and orthorhombic structures of the Fe-acceptor pairs are calculated as a function of charge state and temperature. The gap levels are estimated using the marker method. The vibrational spectra of the complexes containing light impurities (H or B) are predicted.

Original languageEnglish
Article number125204
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume76
Issue number12
DOIs
StatePublished - Sep 11 2007

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