Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement

Yonghao Han; Chunxiao Gao; Yanzhang Ma; Hongwu Liu; Yuewu Pan; Jifeng Luo; Ming Li; Chunyuan He; Xiaowei Huang; Guangtian Zou; Yanchun Li; Xiaodong Li; Jing Liu

doi:10.1063/1.1863444

Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement

Yonghao Han, Chunxiao Gao, Yanzhang Ma, Hongwu Liu, Yuewu Pan, Jifeng Luo, Ming Li, Chunyuan He, Xiaowei Huang, Guangtian Zou, Yanchun Li, Xiaodong Li, Jing Liu

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

97 Scopus citations

Abstract

A multilayer microcircuit on a diamond surface has been developed for high-pressure resistivity measurement in a diamond anvil cell (DAC). Using a film deposition technique, a layer of Mo film was deposited on a diamond anvil as a conductor, topped with a layer of alumina film for insulation. A microelectric circuit was fabricated with a photolithographic shaping method after film encapsulation. With precise control and measurements of all the dimensions of the sample for resistance measurement, including the width of the metallic film and the diameter and thickness of the gasket hole, resistivity of a sample can be accurately determined. This microcircuit can be flexibly fabricated and easily cleaned. It also provides a promising prospect to measure resistivity under in situ high pressure and high temperature. We measured the resistivity of ZnS using this method, and proved the pressure induced phase transition at 13.9-17.9 GPa to be a semiconductor to semiconductor transformation.

Original language	English
Article number	064104
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	6
DOIs	https://doi.org/10.1063/1.1863444
State	Published - Feb 7 2005

Access to Document

10.1063/1.1863444

Cite this

@article{627aa36948ff43b6b79b9e57b76ee8a1,

title = "Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement",

abstract = "A multilayer microcircuit on a diamond surface has been developed for high-pressure resistivity measurement in a diamond anvil cell (DAC). Using a film deposition technique, a layer of Mo film was deposited on a diamond anvil as a conductor, topped with a layer of alumina film for insulation. A microelectric circuit was fabricated with a photolithographic shaping method after film encapsulation. With precise control and measurements of all the dimensions of the sample for resistance measurement, including the width of the metallic film and the diameter and thickness of the gasket hole, resistivity of a sample can be accurately determined. This microcircuit can be flexibly fabricated and easily cleaned. It also provides a promising prospect to measure resistivity under in situ high pressure and high temperature. We measured the resistivity of ZnS using this method, and proved the pressure induced phase transition at 13.9-17.9 GPa to be a semiconductor to semiconductor transformation.",

author = "Yonghao Han and Chunxiao Gao and Yanzhang Ma and Hongwu Liu and Yuewu Pan and Jifeng Luo and Ming Li and Chunyuan He and Xiaowei Huang and Guangtian Zou and Yanchun Li and Xiaodong Li and Jing Liu",

note = "Funding Information: The authors thank Allen White for reading through the manuscript. This work is supported by the National Natural Science Foundation of China and the International Science and Technology Cooperation Project of China (Grant Nos. 10104008, 40473034, and 2001CB711201).",

year = "2005",

month = feb,

day = "7",

doi = "10.1063/1.1863444",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "6",

}

TY - JOUR

T1 - Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement

AU - Han, Yonghao

AU - Gao, Chunxiao

AU - Ma, Yanzhang

AU - Liu, Hongwu

AU - Pan, Yuewu

AU - Luo, Jifeng

AU - Li, Ming

AU - He, Chunyuan

AU - Huang, Xiaowei

AU - Zou, Guangtian

AU - Li, Yanchun

AU - Li, Xiaodong

AU - Liu, Jing

N1 - Funding Information: The authors thank Allen White for reading through the manuscript. This work is supported by the National Natural Science Foundation of China and the International Science and Technology Cooperation Project of China (Grant Nos. 10104008, 40473034, and 2001CB711201).

PY - 2005/2/7

Y1 - 2005/2/7

N2 - A multilayer microcircuit on a diamond surface has been developed for high-pressure resistivity measurement in a diamond anvil cell (DAC). Using a film deposition technique, a layer of Mo film was deposited on a diamond anvil as a conductor, topped with a layer of alumina film for insulation. A microelectric circuit was fabricated with a photolithographic shaping method after film encapsulation. With precise control and measurements of all the dimensions of the sample for resistance measurement, including the width of the metallic film and the diameter and thickness of the gasket hole, resistivity of a sample can be accurately determined. This microcircuit can be flexibly fabricated and easily cleaned. It also provides a promising prospect to measure resistivity under in situ high pressure and high temperature. We measured the resistivity of ZnS using this method, and proved the pressure induced phase transition at 13.9-17.9 GPa to be a semiconductor to semiconductor transformation.

AB - A multilayer microcircuit on a diamond surface has been developed for high-pressure resistivity measurement in a diamond anvil cell (DAC). Using a film deposition technique, a layer of Mo film was deposited on a diamond anvil as a conductor, topped with a layer of alumina film for insulation. A microelectric circuit was fabricated with a photolithographic shaping method after film encapsulation. With precise control and measurements of all the dimensions of the sample for resistance measurement, including the width of the metallic film and the diameter and thickness of the gasket hole, resistivity of a sample can be accurately determined. This microcircuit can be flexibly fabricated and easily cleaned. It also provides a promising prospect to measure resistivity under in situ high pressure and high temperature. We measured the resistivity of ZnS using this method, and proved the pressure induced phase transition at 13.9-17.9 GPa to be a semiconductor to semiconductor transformation.

UR - http://www.scopus.com/inward/record.url?scp=20844436314&partnerID=8YFLogxK

U2 - 10.1063/1.1863444

DO - 10.1063/1.1863444

M3 - Article

AN - SCOPUS:20844436314

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 064104

ER -

Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement

Abstract

Access to Document

Other files and links

Fingerprint

Cite this