InN nano rods and epitaxial layers grown by HVPE on sapphire substrates and GaN, AlGaN, AlN templates

A. Syrkin, A. Usikov, V. Soukhoveev, O. Kovalenkov, V. Ivantsov, V. Dmitriev, C. Collins, E. Readinger, N. Shmidt, S. Nikishin, V. Kuryatkov, D. Song, M. Holtz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


This paper contains results on InN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire, GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes were carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 650°C. Arrays of nano-crystalline InN rods with various shapes were grown directly on sapphire substrates. Continuous InN layers were grown on GaN/sapphire, AlN/sapphire and AlGaN/sapphire template substrates. X-ray diffraction rocking curves for the (00.2) InN reflection exhibit the full width at half maximum (FWHM) as narrow as 0.075 deg. for the nano-rods and 0.128 deg. for the continuous layers grown on GaN/sapphire templates.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Number of pages4
StatePublished - 2006
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2005 Materials Research Society Fall Meeting
Country/TerritoryUnited States
CityBoston, MA


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