TY - GEN
T1 - InN nano rods and epitaxial layers grown by HVPE on sapphire substrates and GaN, AlGaN, AlN templates
AU - Syrkin, A.
AU - Usikov, A.
AU - Soukhoveev, V.
AU - Kovalenkov, O.
AU - Ivantsov, V.
AU - Dmitriev, V.
AU - Collins, C.
AU - Readinger, E.
AU - Shmidt, N.
AU - Nikishin, S.
AU - Kuryatkov, V.
AU - Song, D.
AU - Holtz, M.
PY - 2006
Y1 - 2006
N2 - This paper contains results on InN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire, GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes were carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 650°C. Arrays of nano-crystalline InN rods with various shapes were grown directly on sapphire substrates. Continuous InN layers were grown on GaN/sapphire, AlN/sapphire and AlGaN/sapphire template substrates. X-ray diffraction rocking curves for the (00.2) InN reflection exhibit the full width at half maximum (FWHM) as narrow as 0.075 deg. for the nano-rods and 0.128 deg. for the continuous layers grown on GaN/sapphire templates.
AB - This paper contains results on InN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire, GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes were carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 650°C. Arrays of nano-crystalline InN rods with various shapes were grown directly on sapphire substrates. Continuous InN layers were grown on GaN/sapphire, AlN/sapphire and AlGaN/sapphire template substrates. X-ray diffraction rocking curves for the (00.2) InN reflection exhibit the full width at half maximum (FWHM) as narrow as 0.075 deg. for the nano-rods and 0.128 deg. for the continuous layers grown on GaN/sapphire templates.
UR - http://www.scopus.com/inward/record.url?scp=33646398336&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33646398336
SN - 1558998462
SN - 9781558998469
T3 - Materials Research Society Symposium Proceedings
SP - 151
EP - 154
BT - Materials Research Society Symposium Proceedings
Y2 - 28 November 2005 through 2 December 2005
ER -