Abstract
This paper contains results on InN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire, GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes were carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 650°C. Arrays of nano-crystalline InN rods with various shapes were grown directly on sapphire substrates. Continuous InN layers were grown on GaN/sapphire, AlN/sapphire and AlGaN/sapphire template substrates. X-ray diffraction rocking curves for the (00.2) InN reflection exhibit the full width at half maximum (FWHM) as narrow as 0.075 deg. for the nano-rods and 0.128 deg. for the continuous layers grown on GaN/sapphire templates.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Pages | 151-154 |
| Number of pages | 4 |
| State | Published - 2006 |
| Event | 2005 Materials Research Society Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 2 2005 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 892 |
| ISSN (Print) | 0272-9172 |
Conference
| Conference | 2005 Materials Research Society Fall Meeting |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 11/28/05 → 12/2/05 |
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Cite this
Syrkin, A., Usikov, A., Soukhoveev, V., Kovalenkov, O., Ivantsov, V., Dmitriev, V., Collins, C., Readinger, E., Shmidt, N., Nikishin, S., Kuryatkov, V., Song, D., & Holtz, M. (2006). InN nano rods and epitaxial layers grown by HVPE on sapphire substrates and GaN, AlGaN, AlN templates. In Materials Research Society Symposium Proceedings (pp. 151-154). (Materials Research Society Symposium Proceedings; Vol. 892).