InN nano rods and epitaxial layers grown by HVPE on sapphire substrates and GaN, AlGaN, AlN templates

A. Syrkin; A. Usikov; V. Soukhoveev; O. Kovalenkov; V. Ivantsov; V. Dmitriev; C. Collins; E. Readinger; N. Shmidt; S. Nikishin; V. Kuryatkov; D. Song; M. Holtz

InN nano rods and epitaxial layers grown by HVPE on sapphire substrates and GaN, AlGaN, AlN templates

A. Syrkin, A. Usikov, V. Soukhoveev, O. Kovalenkov, V. Ivantsov, V. Dmitriev, C. Collins, E. Readinger, N. Shmidt, S. Nikishin, V. Kuryatkov, D. Song, M. Holtz

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This paper contains results on InN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire, GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes were carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 650°C. Arrays of nano-crystalline InN rods with various shapes were grown directly on sapphire substrates. Continuous InN layers were grown on GaN/sapphire, AlN/sapphire and AlGaN/sapphire template substrates. X-ray diffraction rocking curves for the (00.2) InN reflection exhibit the full width at half maximum (FWHM) as narrow as 0.075 deg. for the nano-rods and 0.128 deg. for the continuous layers grown on GaN/sapphire templates.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Pages	151-154
Number of pages	4
State	Published - 2006
Event	2005 Materials Research Society Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 2 2005

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	892
ISSN (Print)	0272-9172

Conference

Conference	2005 Materials Research Society Fall Meeting
Country	United States
City	Boston, MA
Period	11/28/05 → 12/2/05

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Syrkin, A., Usikov, A., Soukhoveev, V., Kovalenkov, O., Ivantsov, V., Dmitriev, V., Collins, C., Readinger, E., Shmidt, N., Nikishin, S., Kuryatkov, V., Song, D., & Holtz, M. (2006). InN nano rods and epitaxial layers grown by HVPE on sapphire substrates and GaN, AlGaN, AlN templates. In Materials Research Society Symposium Proceedings (pp. 151-154). (Materials Research Society Symposium Proceedings; Vol. 892).

Syrkin, A. ; Usikov, A. ; Soukhoveev, V. ; Kovalenkov, O. ; Ivantsov, V. ; Dmitriev, V. ; Collins, C. ; Readinger, E. ; Shmidt, N. ; Nikishin, S. ; Kuryatkov, V. ; Song, D. ; Holtz, M. / InN nano rods and epitaxial layers grown by HVPE on sapphire substrates and GaN, AlGaN, AlN templates. Materials Research Society Symposium Proceedings. 2006. pp. 151-154 (Materials Research Society Symposium Proceedings).

@inproceedings{8ff95d9388644a4d9cea8d8b23da7bf2,

title = "InN nano rods and epitaxial layers grown by HVPE on sapphire substrates and GaN, AlGaN, AlN templates",

abstract = "This paper contains results on InN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire, GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes were carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 650°C. Arrays of nano-crystalline InN rods with various shapes were grown directly on sapphire substrates. Continuous InN layers were grown on GaN/sapphire, AlN/sapphire and AlGaN/sapphire template substrates. X-ray diffraction rocking curves for the (00.2) InN reflection exhibit the full width at half maximum (FWHM) as narrow as 0.075 deg. for the nano-rods and 0.128 deg. for the continuous layers grown on GaN/sapphire templates.",

author = "A. Syrkin and A. Usikov and V. Soukhoveev and O. Kovalenkov and V. Ivantsov and V. Dmitriev and C. Collins and E. Readinger and N. Shmidt and S. Nikishin and V. Kuryatkov and D. Song and M. Holtz",

year = "2006",

language = "English",

isbn = "1558998462",

series = "Materials Research Society Symposium Proceedings",

pages = "151--154",

booktitle = "Materials Research Society Symposium Proceedings",

}

Syrkin, A, Usikov, A, Soukhoveev, V, Kovalenkov, O, Ivantsov, V, Dmitriev, V, Collins, C, Readinger, E, Shmidt, N, Nikishin, S, Kuryatkov, V, Song, D & Holtz, M 2006, InN nano rods and epitaxial layers grown by HVPE on sapphire substrates and GaN, AlGaN, AlN templates. in Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 892, pp. 151-154, 2005 Materials Research Society Fall Meeting, Boston, MA, United States, 11/28/05.

InN nano rods and epitaxial layers grown by HVPE on sapphire substrates and GaN, AlGaN, AlN templates. / Syrkin, A.; Usikov, A.; Soukhoveev, V.; Kovalenkov, O.; Ivantsov, V.; Dmitriev, V.; Collins, C.; Readinger, E.; Shmidt, N.; Nikishin, S.; Kuryatkov, V.; Song, D.; Holtz, M.

Materials Research Society Symposium Proceedings. 2006. p. 151-154 (Materials Research Society Symposium Proceedings; Vol. 892).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InN nano rods and epitaxial layers grown by HVPE on sapphire substrates and GaN, AlGaN, AlN templates

AU - Syrkin, A.

AU - Usikov, A.

AU - Soukhoveev, V.

AU - Kovalenkov, O.

AU - Ivantsov, V.

AU - Dmitriev, V.

AU - Collins, C.

AU - Readinger, E.

AU - Shmidt, N.

AU - Nikishin, S.

AU - Kuryatkov, V.

AU - Song, D.

AU - Holtz, M.

PY - 2006

Y1 - 2006

N2 - This paper contains results on InN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire, GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes were carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 650°C. Arrays of nano-crystalline InN rods with various shapes were grown directly on sapphire substrates. Continuous InN layers were grown on GaN/sapphire, AlN/sapphire and AlGaN/sapphire template substrates. X-ray diffraction rocking curves for the (00.2) InN reflection exhibit the full width at half maximum (FWHM) as narrow as 0.075 deg. for the nano-rods and 0.128 deg. for the continuous layers grown on GaN/sapphire templates.

AB - This paper contains results on InN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire, GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes were carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 650°C. Arrays of nano-crystalline InN rods with various shapes were grown directly on sapphire substrates. Continuous InN layers were grown on GaN/sapphire, AlN/sapphire and AlGaN/sapphire template substrates. X-ray diffraction rocking curves for the (00.2) InN reflection exhibit the full width at half maximum (FWHM) as narrow as 0.075 deg. for the nano-rods and 0.128 deg. for the continuous layers grown on GaN/sapphire templates.

UR - http://www.scopus.com/inward/record.url?scp=33646398336&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33646398336

SN - 1558998462

SN - 9781558998469

T3 - Materials Research Society Symposium Proceedings

SP - 151

EP - 154

BT - Materials Research Society Symposium Proceedings

Y2 - 28 November 2005 through 2 December 2005

ER -