InN-based layers grown by modified HVPE

A. Syrkin; A. Usikov; V. Soukhoveev; O. Kovalenkov; V. Ivantsov; V. Dmitriev; C. Collins; E. Readinger; N. Shmidt; V. Davydov; S. Nikishin; V. Kuryatkov; D. Song; D. Rosenbladt; Mark Holtz

doi:10.1002/pssc.200565454

InN-based layers grown by modified HVPE

A. Syrkin, A. Usikov, V. Soukhoveev, O. Kovalenkov, V. Ivantsov, V. Dmitriev, C. Collins, E. Readinger, N. Shmidt, V. Davydov, S. Nikishin, V. Kuryatkov, D. Song, D. Rosenbladt, Mark Holtz

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article

9 Scopus citations

Abstract

This paper contains results on InN and InGaN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire and GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes are carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 750°C. Continuous InN layers are grown on GaN/sapphire template substrates. Textured InN layers are deposited on AlN/sapphire and AlGaN/sapphire templates. Arrays of nano-crystalline InN rods with various shapes are grown directly on sapphire substrates. X-ray diffraction rocking curves for the (002) InN reflection have the full width at half maximum (FWHM) as narrow as 270 arcsec for the nanorods and 460 arcsec for the continuous layers. In _xGa_1-xN layers with InN content up to 10 mol. % are grown on GaN/sapphire templates.

Original language	English
Pages (from-to)	1444-1447
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565454
State	Published - Jul 31 2006
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: Aug 28 2005 → Sep 2 2005

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Syrkin, A., Usikov, A., Soukhoveev, V., Kovalenkov, O., Ivantsov, V., Dmitriev, V., Collins, C., Readinger, E., Shmidt, N., Davydov, V., Nikishin, S., Kuryatkov, V., Song, D., Rosenbladt, D., & Holtz, M. (2006). InN-based layers grown by modified HVPE. Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1444-1447. https://doi.org/10.1002/pssc.200565454

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title = "InN-based layers grown by modified HVPE",

abstract = "This paper contains results on InN and InGaN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire and GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes are carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 750°C. Continuous InN layers are grown on GaN/sapphire template substrates. Textured InN layers are deposited on AlN/sapphire and AlGaN/sapphire templates. Arrays of nano-crystalline InN rods with various shapes are grown directly on sapphire substrates. X-ray diffraction rocking curves for the (002) InN reflection have the full width at half maximum (FWHM) as narrow as 270 arcsec for the nanorods and 460 arcsec for the continuous layers. In xGa1-xN layers with InN content up to 10 mol. % are grown on GaN/sapphire templates.",

author = "A. Syrkin and A. Usikov and V. Soukhoveev and O. Kovalenkov and V. Ivantsov and V. Dmitriev and C. Collins and E. Readinger and N. Shmidt and V. Davydov and S. Nikishin and V. Kuryatkov and D. Song and D. Rosenbladt and Mark Holtz",

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InN-based layers grown by modified HVPE. / Syrkin, A.; Usikov, A.; Soukhoveev, V.; Kovalenkov, O.; Ivantsov, V.; Dmitriev, V.; Collins, C.; Readinger, E.; Shmidt, N.; Davydov, V.; Nikishin, S.; Kuryatkov, V.; Song, D.; Rosenbladt, D.; Holtz, Mark.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 3, 31.07.2006, p. 1444-1447.

Research output: Contribution to journal › Conference article

TY - JOUR

T1 - InN-based layers grown by modified HVPE

AU - Syrkin, A.

AU - Usikov, A.

AU - Soukhoveev, V.

AU - Kovalenkov, O.

AU - Ivantsov, V.

AU - Dmitriev, V.

AU - Collins, C.

AU - Readinger, E.

AU - Shmidt, N.

AU - Davydov, V.

AU - Nikishin, S.

AU - Kuryatkov, V.

AU - Song, D.

AU - Rosenbladt, D.

AU - Holtz, Mark

PY - 2006/7/31

Y1 - 2006/7/31

N2 - This paper contains results on InN and InGaN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire and GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes are carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 750°C. Continuous InN layers are grown on GaN/sapphire template substrates. Textured InN layers are deposited on AlN/sapphire and AlGaN/sapphire templates. Arrays of nano-crystalline InN rods with various shapes are grown directly on sapphire substrates. X-ray diffraction rocking curves for the (002) InN reflection have the full width at half maximum (FWHM) as narrow as 270 arcsec for the nanorods and 460 arcsec for the continuous layers. In xGa1-xN layers with InN content up to 10 mol. % are grown on GaN/sapphire templates.

AB - This paper contains results on InN and InGaN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire and GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes are carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 750°C. Continuous InN layers are grown on GaN/sapphire template substrates. Textured InN layers are deposited on AlN/sapphire and AlGaN/sapphire templates. Arrays of nano-crystalline InN rods with various shapes are grown directly on sapphire substrates. X-ray diffraction rocking curves for the (002) InN reflection have the full width at half maximum (FWHM) as narrow as 270 arcsec for the nanorods and 460 arcsec for the continuous layers. In xGa1-xN layers with InN content up to 10 mol. % are grown on GaN/sapphire templates.

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VL - 3

SP - 1444

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JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

Y2 - 28 August 2005 through 2 September 2005

ER -

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10.1002/pssc.200565454

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