InN-based layers grown by modified HVPE

A. Syrkin, A. Usikov, V. Soukhoveev, O. Kovalenkov, V. Ivantsov, V. Dmitriev, C. Collins, E. Readinger, N. Shmidt, V. Davydov, S. Nikishin, V. Kuryatkov, D. Song, D. Rosenbladt, Mark Holtz

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

This paper contains results on InN and InGaN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire and GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes are carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 750°C. Continuous InN layers are grown on GaN/sapphire template substrates. Textured InN layers are deposited on AlN/sapphire and AlGaN/sapphire templates. Arrays of nano-crystalline InN rods with various shapes are grown directly on sapphire substrates. X-ray diffraction rocking curves for the (002) InN reflection have the full width at half maximum (FWHM) as narrow as 270 arcsec for the nanorods and 460 arcsec for the continuous layers. In xGa1-xN layers with InN content up to 10 mol. % are grown on GaN/sapphire templates.

Original languageEnglish
Pages (from-to)1444-1447
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
StatePublished - 2006
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: Aug 28 2005Sep 2 2005

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