InGaN/GaN quantum well interconnected microdisk light emitting diodes

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Abstract

Interconnected microdisk light-emitting diodes (μ-LEDs) have been fabricated from InGaN/GaN single quantum wells grown by low pressure metal organic chemical vapor deposition. These interconnected μ-disk LEDs fit into the same device area taken up by a conventional broad-area LED. The performance characteristic of these interconnected μ-disk LEDs, including I - V and L - I characteristics as well as electroluminescence spectra have been measured and compared with those of the conventional broad-area LEDs. For interconnected μ-disk LEDs, while VF, the forward biased voltage at 20 mA, was slightly increased, the emission efficiency was increased by as much as 60% over the conventional LEDs for a fixed device area. The results thus suggested that replacing a conventional broad-area LED with an interconnected μ-disk LED, the external quantum efficiency can be significantly enhanced. Finally, the fabrication processes of the interconnected μ-disk LEDs are almost the same as those of the conventional broad-area LEDs. It is thus expected the total yield of these interconnected μ-disk LEDs to be the same as the conventional broad-area LEDs. The present method of utilizing interconnected μ-disk LEDs for improving the brightness of LEDs is applicable to other semiconductor LEDs as well as polymer and organic LEDs.

Original languageEnglish
Pages (from-to)3236-3238
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number20
DOIs
StatePublished - Nov 13 2000

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