InGaN/GaN multiple quantum well solar cells with long operating wavelengths

R. Dahal; B. Pantha; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.3081123

InGaN/GaN multiple quantum well solar cells with long operating wavelengths

R. Dahal, B. Pantha, J. Li, J. Y. Lin, H. X. Jiang

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351 Scopus citations

Abstract

We report on the fabrication and photovoltaic characteristics of InGaN solar cells by exploiting InGaN/GaN multiple quantum wells (MQWs) with In contents exceeding 0.3, attempting to alleviate to a certain degree the phase separation issue and demonstrate solar cell operation at wavelengths longer than previous attainments (>420 nm). The fabricated solar cells based on In _0.3 Ga_0.7 N/GaN MQWs exhibit an open circuit voltage of about 2 V, fill factor of about 60%, and an external efficiency of 40% (10%) at 420 nm (450 nm).

Original language	English
Article number	063505
Journal	Applied Physics Letters
Volume	94
Issue number	6
DOIs	https://doi.org/10.1063/1.3081123
State	Published - 2009

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@article{0f26c083e4eb42ebb747f90929c80320,

title = "InGaN/GaN multiple quantum well solar cells with long operating wavelengths",

abstract = "We report on the fabrication and photovoltaic characteristics of InGaN solar cells by exploiting InGaN/GaN multiple quantum wells (MQWs) with In contents exceeding 0.3, attempting to alleviate to a certain degree the phase separation issue and demonstrate solar cell operation at wavelengths longer than previous attainments (>420 nm). The fabricated solar cells based on In 0.3 Ga0.7 N/GaN MQWs exhibit an open circuit voltage of about 2 V, fill factor of about 60%, and an external efficiency of 40% (10%) at 420 nm (450 nm).",

author = "R. Dahal and B. Pantha and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: This materials growth effort was supported by DARPA and the device characterization effort was supported by AFOSR (Grant No FA9550-06-1-0441). H.X.J. and J.Y.L. gratefully acknowledge the support of the Edward Whitacre Endowed Chair and Linda Whitacre Endowed Chair through the AT&T Foundation. ",

year = "2009",

doi = "10.1063/1.3081123",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "6",

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TY - JOUR

T1 - InGaN/GaN multiple quantum well solar cells with long operating wavelengths

AU - Dahal, R.

AU - Pantha, B.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: This materials growth effort was supported by DARPA and the device characterization effort was supported by AFOSR (Grant No FA9550-06-1-0441). H.X.J. and J.Y.L. gratefully acknowledge the support of the Edward Whitacre Endowed Chair and Linda Whitacre Endowed Chair through the AT&T Foundation.

PY - 2009

Y1 - 2009

N2 - We report on the fabrication and photovoltaic characteristics of InGaN solar cells by exploiting InGaN/GaN multiple quantum wells (MQWs) with In contents exceeding 0.3, attempting to alleviate to a certain degree the phase separation issue and demonstrate solar cell operation at wavelengths longer than previous attainments (>420 nm). The fabricated solar cells based on In 0.3 Ga0.7 N/GaN MQWs exhibit an open circuit voltage of about 2 V, fill factor of about 60%, and an external efficiency of 40% (10%) at 420 nm (450 nm).

AB - We report on the fabrication and photovoltaic characteristics of InGaN solar cells by exploiting InGaN/GaN multiple quantum wells (MQWs) with In contents exceeding 0.3, attempting to alleviate to a certain degree the phase separation issue and demonstrate solar cell operation at wavelengths longer than previous attainments (>420 nm). The fabricated solar cells based on In 0.3 Ga0.7 N/GaN MQWs exhibit an open circuit voltage of about 2 V, fill factor of about 60%, and an external efficiency of 40% (10%) at 420 nm (450 nm).

UR - http://www.scopus.com/inward/record.url?scp=60349107985&partnerID=8YFLogxK

U2 - 10.1063/1.3081123

DO - 10.1063/1.3081123

M3 - Article

AN - SCOPUS:60349107985

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 063505

ER -

InGaN/GaN multiple quantum well solar cells with long operating wavelengths

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