TY - GEN
T1 - InGaN/GaN multiple quantum well solar cells for energy and hydrogen generation
AU - Jiang, Hongxing
AU - Lin, Jingyu
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2015
Y1 - 2015
N2 - InGaN alloys are promising for solar cells and solar water splitting because they have direct bandgaps that cover almost the whole solar spectrum. This paper provides a brief overview on recent advances made by our group in the area of III-nitrides for energy and hydrogen generation. Solar cells based on InxGa1-xN/GaN (x∼0.35) multiple quantum well (MQW) structures have been fabricated and were shown exhibit an open circuit voltage (Voc) of 1.80 V, short circuit current density (Jsc) of 2.5 mA/cm2 and a solar-energy-to-electricity conversion efficiency (η) of 2.95% under the irradiation by a simulated sunlight (AM 1.5 G, 1-sun, 100 mW/cm2). Under the irradiation of concentrated sunlight, Voc, Jsc and η were found to increase with solar concentration. Furthermore, InGaN/GaN MQW solar cells were effectively monolithic solar-photoelectrochemical cells which are capable to directly generate hydrogen gas under zero bias via solar water splitting. Under the irradiation of 1 sun (AM 1.5 G), a 1.5% solarto-fuel conversion efficiency has been achieved under zero bias with an excellent chemical stability.
AB - InGaN alloys are promising for solar cells and solar water splitting because they have direct bandgaps that cover almost the whole solar spectrum. This paper provides a brief overview on recent advances made by our group in the area of III-nitrides for energy and hydrogen generation. Solar cells based on InxGa1-xN/GaN (x∼0.35) multiple quantum well (MQW) structures have been fabricated and were shown exhibit an open circuit voltage (Voc) of 1.80 V, short circuit current density (Jsc) of 2.5 mA/cm2 and a solar-energy-to-electricity conversion efficiency (η) of 2.95% under the irradiation by a simulated sunlight (AM 1.5 G, 1-sun, 100 mW/cm2). Under the irradiation of concentrated sunlight, Voc, Jsc and η were found to increase with solar concentration. Furthermore, InGaN/GaN MQW solar cells were effectively monolithic solar-photoelectrochemical cells which are capable to directly generate hydrogen gas under zero bias via solar water splitting. Under the irradiation of 1 sun (AM 1.5 G), a 1.5% solarto-fuel conversion efficiency has been achieved under zero bias with an excellent chemical stability.
UR - http://www.scopus.com/inward/record.url?scp=84931346238&partnerID=8YFLogxK
U2 - 10.1149/06601.0129ecst
DO - 10.1149/06601.0129ecst
M3 - Conference contribution
AN - SCOPUS:84931346238
T3 - ECS Transactions
SP - 129
EP - 134
BT - Wide Bandgap Semiconductor Materials and Devices 16
A2 - Jang, S.
A2 - Shenai, K.
A2 - Hunter, G. W.
A2 - Ren, F.
A2 - O'Dwyer, C.
A2 - Mishra, K. C.
PB - Electrochemical Society Inc.
T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting
Y2 - 24 May 2015 through 28 May 2015
ER -