InGaN/GaN multiple quantum well solar cells for energy and hydrogen generation

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Abstract

InGaN alloys are promising for solar cells and solar water splitting because they have direct bandgaps that cover almost the whole solar spectrum. This paper provides a brief overview on recent advances made by our group in the area of III-nitrides for energy and hydrogen generation. Solar cells based on InxGa1-xN/GaN (x∼0.35) multiple quantum well (MQW) structures have been fabricated and were shown exhibit an open circuit voltage (Voc) of 1.80 V, short circuit current density (Jsc) of 2.5 mA/cm2 and a solar-energy-to-electricity conversion efficiency (η) of 2.95% under the irradiation by a simulated sunlight (AM 1.5 G, 1-sun, 100 mW/cm2). Under the irradiation of concentrated sunlight, Voc, Jsc and η were found to increase with solar concentration. Furthermore, InGaN/GaN MQW solar cells were effectively monolithic solar-photoelectrochemical cells which are capable to directly generate hydrogen gas under zero bias via solar water splitting. Under the irradiation of 1 sun (AM 1.5 G), a 1.5% solarto-fuel conversion efficiency has been achieved under zero bias with an excellent chemical stability.

Original languageEnglish
Title of host publicationWide Bandgap Semiconductor Materials and Devices 16
EditorsS. Jang, K. C. Mishra, K. Shenai, C. O'Dwyer, G. W. Hunter, F. Ren
PublisherElectrochemical Society Inc.
Pages129-134
Number of pages6
Edition1
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2015
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting - Chicago, United States
Duration: May 24 2015May 28 2015

Publication series

NameECS Transactions
Number1
Volume66
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting
CountryUnited States
CityChicago
Period05/24/1505/28/15

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    Jiang, H., & Lin, J. (2015). InGaN/GaN multiple quantum well solar cells for energy and hydrogen generation. In S. Jang, K. C. Mishra, K. Shenai, C. O'Dwyer, G. W. Hunter, & F. Ren (Eds.), Wide Bandgap Semiconductor Materials and Devices 16 (1 ed., pp. 129-134). (ECS Transactions; Vol. 66, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/06601.0129ecst