InGaN/GaN multiple quantum well concentrator solar cells

R. Dahal, J. Li, K. Aryal, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticlepeer-review

186 Scopus citations


We present the growth, fabrication, and photovoltaic characteristics of Inx Ga1-xN/GaN(x∼0.35) multiple quantum well solar cells for concentrator applications. The open circuit voltage, short circuit current density, and solar-energy-to-electricity conversion efficiency were found to increase under concentrated sunlight. The overall efficiency increases from 2.95% to 3.03% when solar concentration increases from 1 to 30 suns and could be enhanced by further improving the material quality.

Original languageEnglish
Article number073115
JournalApplied Physics Letters
Issue number7
StatePublished - Aug 16 2010


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