InGaN/GaN multiple quantum well concentrator solar cells

R. Dahal; J. Li; K. Aryal; J. Y. Lin; H. X. Jiang

doi:10.1063/1.3481424

InGaN/GaN multiple quantum well concentrator solar cells

R. Dahal, J. Li, K. Aryal, J. Y. Lin, H. X. Jiang

Research output: Contribution to journal › Article › peer-review

186 Scopus citations

Abstract

We present the growth, fabrication, and photovoltaic characteristics of In_x Ga_1-xN/GaN(x∼0.35) multiple quantum well solar cells for concentrator applications. The open circuit voltage, short circuit current density, and solar-energy-to-electricity conversion efficiency were found to increase under concentrated sunlight. The overall efficiency increases from 2.95% to 3.03% when solar concentration increases from 1 to 30 suns and could be enhanced by further improving the material quality.

Original language	English
Article number	073115
Journal	Applied Physics Letters
Volume	97
Issue number	7
DOIs	https://doi.org/10.1063/1.3481424
State	Published - Aug 16 2010

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@article{75592ef1498442ac947c59b31ecb5dc3,

title = "InGaN/GaN multiple quantum well concentrator solar cells",

abstract = "We present the growth, fabrication, and photovoltaic characteristics of Inx Ga1-xN/GaN(x∼0.35) multiple quantum well solar cells for concentrator applications. The open circuit voltage, short circuit current density, and solar-energy-to-electricity conversion efficiency were found to increase under concentrated sunlight. The overall efficiency increases from 2.95% to 3.03% when solar concentration increases from 1 to 30 suns and could be enhanced by further improving the material quality.",

author = "R. Dahal and J. Li and K. Aryal and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: This research was supported by NSF (Grant No. DMR-0906879). Jiang and Lin gratefully acknowledge the support of the Whitacre Endowed Chair positions by the AT & T Foundation.",

year = "2010",

month = aug,

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doi = "10.1063/1.3481424",

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journal = "Applied Physics Letters",

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T1 - InGaN/GaN multiple quantum well concentrator solar cells

AU - Dahal, R.

AU - Li, J.

AU - Aryal, K.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: This research was supported by NSF (Grant No. DMR-0906879). Jiang and Lin gratefully acknowledge the support of the Whitacre Endowed Chair positions by the AT & T Foundation.

PY - 2010/8/16

Y1 - 2010/8/16

N2 - We present the growth, fabrication, and photovoltaic characteristics of Inx Ga1-xN/GaN(x∼0.35) multiple quantum well solar cells for concentrator applications. The open circuit voltage, short circuit current density, and solar-energy-to-electricity conversion efficiency were found to increase under concentrated sunlight. The overall efficiency increases from 2.95% to 3.03% when solar concentration increases from 1 to 30 suns and could be enhanced by further improving the material quality.

AB - We present the growth, fabrication, and photovoltaic characteristics of Inx Ga1-xN/GaN(x∼0.35) multiple quantum well solar cells for concentrator applications. The open circuit voltage, short circuit current density, and solar-energy-to-electricity conversion efficiency were found to increase under concentrated sunlight. The overall efficiency increases from 2.95% to 3.03% when solar concentration increases from 1 to 30 suns and could be enhanced by further improving the material quality.

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U2 - 10.1063/1.3481424

DO - 10.1063/1.3481424

M3 - Article

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VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 073115

ER -

InGaN/GaN multiple quantum well concentrator solar cells

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