InGaAs/InP quantum wells with thickness modulation

M. J.S.P. Brasil; A. A. Bernussi; M. A. Cotta; M. V. Marquezini; J. A. Brum; R. A. Hamm; S. N.G. Chu; L. R. Harriott; H. Temkin

doi:10.1063/1.112182

InGaAs/InP quantum wells with thickness modulation

M. J.S.P. Brasil, A. A. Bernussi, M. A. Cotta, M. V. Marquezini, J. A. Brum, R. A. Hamm, S. N.G. Chu, L. R. Harriott, H. Temkin

Electrical and Computer Engineering

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Abstract

We investigated the optical properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy on top of patterned InP buffer layers with elongated features along the [01̄1] direction. The resulting quantum wells present a periodic thickness variation following the elongated features. Low temperature luminescence measurements exhibit double emission bands, attributed to distinct regions of the well. Temperature evolution of the photoluminescence spectra gives qualitative information about the effect of exciton localization.

Original language	English
Pages (from-to)	857-859
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	7
DOIs	https://doi.org/10.1063/1.112182
State	Published - 1994

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title = "InGaAs/InP quantum wells with thickness modulation",

abstract = "We investigated the optical properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy on top of patterned InP buffer layers with elongated features along the [0{\=1}1] direction. The resulting quantum wells present a periodic thickness variation following the elongated features. Low temperature luminescence measurements exhibit double emission bands, attributed to distinct regions of the well. Temperature evolution of the photoluminescence spectra gives qualitative information about the effect of exciton localization.",

author = "Brasil, {M. J.S.P.} and Bernussi, {A. A.} and Cotta, {M. A.} and Marquezini, {M. V.} and Brum, {J. A.} and Hamm, {R. A.} and Chu, {S. N.G.} and Harriott, {L. R.} and H. Temkin",

year = "1994",

doi = "10.1063/1.112182",

language = "English",

volume = "65",

pages = "857--859",

journal = "Applied Physics Letters",

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number = "7",

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TY - JOUR

T1 - InGaAs/InP quantum wells with thickness modulation

AU - Brasil, M. J.S.P.

AU - Bernussi, A. A.

AU - Cotta, M. A.

AU - Marquezini, M. V.

AU - Brum, J. A.

AU - Hamm, R. A.

AU - Chu, S. N.G.

AU - Harriott, L. R.

AU - Temkin, H.

PY - 1994

Y1 - 1994

N2 - We investigated the optical properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy on top of patterned InP buffer layers with elongated features along the [01̄1] direction. The resulting quantum wells present a periodic thickness variation following the elongated features. Low temperature luminescence measurements exhibit double emission bands, attributed to distinct regions of the well. Temperature evolution of the photoluminescence spectra gives qualitative information about the effect of exciton localization.

AB - We investigated the optical properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy on top of patterned InP buffer layers with elongated features along the [01̄1] direction. The resulting quantum wells present a periodic thickness variation following the elongated features. Low temperature luminescence measurements exhibit double emission bands, attributed to distinct regions of the well. Temperature evolution of the photoluminescence spectra gives qualitative information about the effect of exciton localization.

UR - http://www.scopus.com/inward/record.url?scp=0042386883&partnerID=8YFLogxK

U2 - 10.1063/1.112182

DO - 10.1063/1.112182

M3 - Article

AN - SCOPUS:0042386883

VL - 65

SP - 857

EP - 859

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -

InGaAs/InP quantum wells with thickness modulation

Abstract

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