InGaAs/InP quantum wells with thickness modulation

M. J.S.P. Brasil, A. A. Bernussi, M. A. Cotta, M. V. Marquezini, J. A. Brum, R. A. Hamm, S. N.G. Chu, L. R. Harriott, H. Temkin

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Abstract

We investigated the optical properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy on top of patterned InP buffer layers with elongated features along the [01̄1] direction. The resulting quantum wells present a periodic thickness variation following the elongated features. Low temperature luminescence measurements exhibit double emission bands, attributed to distinct regions of the well. Temperature evolution of the photoluminescence spectra gives qualitative information about the effect of exciton localization.

Original languageEnglish
Pages (from-to)857-859
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number7
DOIs
StatePublished - 1994

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