InGaAs/InP quantum wells with periodic thickness variation

A. A. Bernussi; M. J.S.P. Brasil; J. A. Brum; M. A. Cotta; R. A. Hamm; T. W. Staley; S. N.G. Chu; L. R. Harriott; M. B. Panish; H. Temkin

doi:10.1016/0038-1101(94)90268-2

InGaAs/InP quantum wells with periodic thickness variation

A. A. Bernussi, M. J.S.P. Brasil, J. A. Brum, M. A. Cotta, R. A. Hamm, T. W. Staley, S. N.G. Chu, L. R. Harriott, M. B. Panish, H. Temkin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the optical and structural properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy. The growth conditions were chosen to provide a patterned InP buffer layer surface with elongated features aligned in the [011] direction. The morphology of the patterned surface was revealed by transmission electron and scanning force microscopy measurements. Low temperature photoluminescence results are correlated with teh structural properties of the samples. The observation of multiple emission lines indicates the presence of elongated terraces with different thicknesses at the interface of the single quantum well. Information about the carrier dynamics between these elongated terraces is obtained from the photoluminescence temperature dependence.

Original language	English
Pages (from-to)	653-656
Number of pages	4
Journal	Solid State Electronics
Volume	37
Issue number	4-6
DOIs	https://doi.org/10.1016/0038-1101(94)90268-2
State	Published - 1994

Access to Document

10.1016/0038-1101(94)90268-2

Cite this

@article{5bc429193c264b318d605fb7b3fb9861,

title = "InGaAs/InP quantum wells with periodic thickness variation",

abstract = "We investigated the optical and structural properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy. The growth conditions were chosen to provide a patterned InP buffer layer surface with elongated features aligned in the [011] direction. The morphology of the patterned surface was revealed by transmission electron and scanning force microscopy measurements. Low temperature photoluminescence results are correlated with teh structural properties of the samples. The observation of multiple emission lines indicates the presence of elongated terraces with different thicknesses at the interface of the single quantum well. Information about the carrier dynamics between these elongated terraces is obtained from the photoluminescence temperature dependence.",

author = "Bernussi, {A. A.} and Brasil, {M. J.S.P.} and Brum, {J. A.} and Cotta, {M. A.} and Hamm, {R. A.} and Staley, {T. W.} and Chu, {S. N.G.} and Harriott, {L. R.} and Panish, {M. B.} and H. Temkin",

note = "Funding Information: Acknowledgements--The authors gratefully acknowledge the financial assistance from CNpQ and FAPESP.",

year = "1994",

doi = "10.1016/0038-1101(94)90268-2",

language = "English",

volume = "37",

pages = "653--656",

journal = "Solid State Electronics",

issn = "0038-1101",

number = "4-6",

}

TY - JOUR

T1 - InGaAs/InP quantum wells with periodic thickness variation

AU - Bernussi, A. A.

AU - Brasil, M. J.S.P.

AU - Brum, J. A.

AU - Cotta, M. A.

AU - Hamm, R. A.

AU - Staley, T. W.

AU - Chu, S. N.G.

AU - Harriott, L. R.

AU - Panish, M. B.

AU - Temkin, H.

N1 - Funding Information: Acknowledgements--The authors gratefully acknowledge the financial assistance from CNpQ and FAPESP.

PY - 1994

Y1 - 1994

N2 - We investigated the optical and structural properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy. The growth conditions were chosen to provide a patterned InP buffer layer surface with elongated features aligned in the [011] direction. The morphology of the patterned surface was revealed by transmission electron and scanning force microscopy measurements. Low temperature photoluminescence results are correlated with teh structural properties of the samples. The observation of multiple emission lines indicates the presence of elongated terraces with different thicknesses at the interface of the single quantum well. Information about the carrier dynamics between these elongated terraces is obtained from the photoluminescence temperature dependence.

AB - We investigated the optical and structural properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy. The growth conditions were chosen to provide a patterned InP buffer layer surface with elongated features aligned in the [011] direction. The morphology of the patterned surface was revealed by transmission electron and scanning force microscopy measurements. Low temperature photoluminescence results are correlated with teh structural properties of the samples. The observation of multiple emission lines indicates the presence of elongated terraces with different thicknesses at the interface of the single quantum well. Information about the carrier dynamics between these elongated terraces is obtained from the photoluminescence temperature dependence.

UR - http://www.scopus.com/inward/record.url?scp=0028409285&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(94)90268-2

DO - 10.1016/0038-1101(94)90268-2

M3 - Article

AN - SCOPUS:0028409285

SN - 0038-1101

VL - 37

SP - 653

EP - 656

JO - Solid State Electronics

JF - Solid State Electronics

IS - 4-6

ER -

InGaAs/InP quantum wells with periodic thickness variation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this