InGaAs/InP quantum wells with periodic thickness variation

A. A. Bernussi, M. J.S.P. Brasil, J. A. Brum, M. A. Cotta, R. A. Hamm, T. W. Staley, S. N.G. Chu, L. R. Harriott, M. B. Panish, H. Temkin

Research output: Contribution to journalArticle

Abstract

We investigated the optical and structural properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy. The growth conditions were chosen to provide a patterned InP buffer layer surface with elongated features aligned in the [011] direction. The morphology of the patterned surface was revealed by transmission electron and scanning force microscopy measurements. Low temperature photoluminescence results are correlated with teh structural properties of the samples. The observation of multiple emission lines indicates the presence of elongated terraces with different thicknesses at the interface of the single quantum well. Information about the carrier dynamics between these elongated terraces is obtained from the photoluminescence temperature dependence.

Original languageEnglish
Pages (from-to)653-656
Number of pages4
JournalSolid State Electronics
Volume37
Issue number4-6
DOIs
StatePublished - 1994

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    Bernussi, A. A., Brasil, M. J. S. P., Brum, J. A., Cotta, M. A., Hamm, R. A., Staley, T. W., Chu, S. N. G., Harriott, L. R., Panish, M. B., & Temkin, H. (1994). InGaAs/InP quantum wells with periodic thickness variation. Solid State Electronics, 37(4-6), 653-656. https://doi.org/10.1016/0038-1101(94)90268-2