Influences of device size on small- And large-signal performance of SiGe power HBTs

Guogong Wang, Jonghoo Park, Hui Li, Zhenqiang Ma, Donald Lie, Jerry Lopez, A. M. Hurtado

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The influences of device size on the small- and large-signal performance of SiGe power HBTs were experimentally studied. It is found that due to the increased parasitica along with the increase of device area, the maximum power gain Gmax (MAG/MSG), maximum oscillation frequency fmax and large-signal power gain continuously decease with the increase of device size. Furthermore, when the device size is larger than a certain area, the degradation of power gain is so severe that further increasing device area will not increase the output power of a SiGe power HBT.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages188-190
Number of pages3
ISBN (Print)1424401615, 9781424401611
DOIs
StatePublished - Jan 1 2006
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: Oct 23 2006Oct 26 2006

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period10/23/0610/26/06

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