Influences of device size on small- And large-signal performance of SiGe power HBTs

Guogong Wang; Jonghoo Park; Hui Li; Zhenqiang Ma; Donald Lie; Jerry Lopez; A. M. Hurtado

doi:10.1109/ICSICT.2006.306134

Influences of device size on small- And large-signal performance of SiGe power HBTs

Guogong Wang, Jonghoo Park, Hui Li, Zhenqiang Ma, Donald Lie, Jerry Lopez, A. M. Hurtado

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The influences of device size on the small- and large-signal performance of SiGe power HBTs were experimentally studied. It is found that due to the increased parasitica along with the increase of device area, the maximum power gain G_max (MAG/MSG), maximum oscillation frequency f_max and large-signal power gain continuously decease with the increase of device size. Furthermore, when the device size is larger than a certain area, the degradation of power gain is so severe that further increasing device area will not increase the output power of a SiGe power HBT.

Original language	English
Title of host publication	ICSICT-2006
Subtitle of host publication	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Publisher	IEEE Computer Society
Pages	188-190
Number of pages	3
ISBN (Print)	1424401615, 9781424401611
DOIs	https://doi.org/10.1109/ICSICT.2006.306134
State	Published - Jan 1 2006
Event	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: Oct 23 2006 → Oct 26 2006

Publication series

Name	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	10/23/06 → 10/26/06

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10.1109/ICSICT.2006.306134

Cite this

Wang, G., Park, J., Li, H., Ma, Z., Lie, D., Lopez, J., & Hurtado, A. M. (2006). Influences of device size on small- And large-signal performance of SiGe power HBTs. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 188-190). Article 4098056 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306134

Wang, Guogong ; Park, Jonghoo ; Li, Hui et al. / Influences of device size on small- And large-signal performance of SiGe power HBTs. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. pp. 188-190 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{76a3419b42834a9ebc6bc9fc43f65d08,

title = "Influences of device size on small- And large-signal performance of SiGe power HBTs",

abstract = "The influences of device size on the small- and large-signal performance of SiGe power HBTs were experimentally studied. It is found that due to the increased parasitica along with the increase of device area, the maximum power gain Gmax (MAG/MSG), maximum oscillation frequency fmax and large-signal power gain continuously decease with the increase of device size. Furthermore, when the device size is larger than a certain area, the degradation of power gain is so severe that further increasing device area will not increase the output power of a SiGe power HBT.",

author = "Guogong Wang and Jonghoo Park and Hui Li and Zhenqiang Ma and Donald Lie and Jerry Lopez and Hurtado, {A. M.}",

year = "2006",

month = jan,

day = "1",

doi = "10.1109/ICSICT.2006.306134",

language = "English",

isbn = "1424401615",

series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

publisher = "IEEE Computer Society",

pages = "188--190",

booktitle = "ICSICT-2006",

note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",

}

Wang, G, Park, J, Li, H, Ma, Z, Lie, D, Lopez, J & Hurtado, AM 2006, Influences of device size on small- And large-signal performance of SiGe power HBTs. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098056, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 188-190, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 10/23/06. https://doi.org/10.1109/ICSICT.2006.306134

Influences of device size on small- And large-signal performance of SiGe power HBTs. / Wang, Guogong; Park, Jonghoo; Li, Hui et al.
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 188-190 4098056 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Influences of device size on small- And large-signal performance of SiGe power HBTs

AU - Wang, Guogong

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AU - Li, Hui

AU - Ma, Zhenqiang

AU - Lie, Donald

AU - Lopez, Jerry

AU - Hurtado, A. M.

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N2 - The influences of device size on the small- and large-signal performance of SiGe power HBTs were experimentally studied. It is found that due to the increased parasitica along with the increase of device area, the maximum power gain Gmax (MAG/MSG), maximum oscillation frequency fmax and large-signal power gain continuously decease with the increase of device size. Furthermore, when the device size is larger than a certain area, the degradation of power gain is so severe that further increasing device area will not increase the output power of a SiGe power HBT.

AB - The influences of device size on the small- and large-signal performance of SiGe power HBTs were experimentally studied. It is found that due to the increased parasitica along with the increase of device area, the maximum power gain Gmax (MAG/MSG), maximum oscillation frequency fmax and large-signal power gain continuously decease with the increase of device size. Furthermore, when the device size is larger than a certain area, the degradation of power gain is so severe that further increasing device area will not increase the output power of a SiGe power HBT.

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U2 - 10.1109/ICSICT.2006.306134

DO - 10.1109/ICSICT.2006.306134

M3 - Conference contribution

SN - 1424401615

SN - 9781424401611

T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

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BT - ICSICT-2006

PB - IEEE Computer Society

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Wang G, Park J, Li H, Ma Z, Lie D, Lopez J et al. Influences of device size on small- And large-signal performance of SiGe power HBTs. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 188-190. 4098056. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2006.306134

Influences of device size on small- And large-signal performance of SiGe power HBTs

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