Influence of the carrier scattering time on the lineshape of shallow impurity emission bands in GaAs

M. J.S.P. Brasil, A. A. Bernussi, P. Motisuke

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of scattering time of carriers are introduced in the analysis of donor-acceptor and band-acceptor photoluminescence bandshape in GaAs. The proposed model is in very good agreement with experimental spectra, markedly in the low energy edges of the emission bands. We apply this model to optically determine the compensation ratio and the relative concentration of residual acceptor impurities in n-type GaAs samples grown by MOVPE.

Original languageEnglish
Pages (from-to)13-16
Number of pages4
JournalSolid State Communications
Volume71
Issue number1
DOIs
StatePublished - Jul 1989

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