Influence of photonic nanotexture on the light extraction efficiency of GaN

L. Tian; N. Stojanovic; D. Y. Song; A. A. Bernussi; J. M. Berg; M. Holtz

doi:10.1063/1.2783474

Influence of photonic nanotexture on the light extraction efficiency of GaN

L. Tian, N. Stojanovic, D. Y. Song, A. A. Bernussi, J. M. Berg, M. Holtz

Electrical and Computer Engineering

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Abstract

The authors report the effects of nanoscale texturing on the optical properties of GaN. The texture consists of circular holes etched in a hexagonal array with 1 μm spacing. Hole diameters range from 120 to 700 nm and depths range up to 1 μm. The optical properties are studied using cathodoluminescence (CL) measurements in a scanning electron microscope. Intensity is found to increase with pore diameter, an effect they attribute to changes in the optical extraction efficiencies. A systematic redshift observed in the CL peak is attributed to local relaxation of the compressive stress present in the starting GaN epilayer.

Original language	English
Article number	103115
Journal	Applied Physics Letters
Volume	91
Issue number	10
DOIs	https://doi.org/10.1063/1.2783474
State	Published - 2007

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@article{e38fb57160a3430491c9d1bfbe3033a4,

title = "Influence of photonic nanotexture on the light extraction efficiency of GaN",

abstract = "The authors report the effects of nanoscale texturing on the optical properties of GaN. The texture consists of circular holes etched in a hexagonal array with 1 μm spacing. Hole diameters range from 120 to 700 nm and depths range up to 1 μm. The optical properties are studied using cathodoluminescence (CL) measurements in a scanning electron microscope. Intensity is found to increase with pore diameter, an effect they attribute to changes in the optical extraction efficiencies. A systematic redshift observed in the CL peak is attributed to local relaxation of the compressive stress present in the starting GaN epilayer.",

author = "L. Tian and N. Stojanovic and Song, {D. Y.} and Bernussi, {A. A.} and Berg, {J. M.} and M. Holtz",

note = "Funding Information: The authors acknowledge support from the National Science Foundation (ECS-0304224 and ECS-0609416) and the J. F Maddox Foundation.",

year = "2007",

doi = "10.1063/1.2783474",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "10",

}

TY - JOUR

T1 - Influence of photonic nanotexture on the light extraction efficiency of GaN

AU - Tian, L.

AU - Stojanovic, N.

AU - Song, D. Y.

AU - Bernussi, A. A.

AU - Berg, J. M.

AU - Holtz, M.

N1 - Funding Information: The authors acknowledge support from the National Science Foundation (ECS-0304224 and ECS-0609416) and the J. F Maddox Foundation.

PY - 2007

Y1 - 2007

N2 - The authors report the effects of nanoscale texturing on the optical properties of GaN. The texture consists of circular holes etched in a hexagonal array with 1 μm spacing. Hole diameters range from 120 to 700 nm and depths range up to 1 μm. The optical properties are studied using cathodoluminescence (CL) measurements in a scanning electron microscope. Intensity is found to increase with pore diameter, an effect they attribute to changes in the optical extraction efficiencies. A systematic redshift observed in the CL peak is attributed to local relaxation of the compressive stress present in the starting GaN epilayer.

AB - The authors report the effects of nanoscale texturing on the optical properties of GaN. The texture consists of circular holes etched in a hexagonal array with 1 μm spacing. Hole diameters range from 120 to 700 nm and depths range up to 1 μm. The optical properties are studied using cathodoluminescence (CL) measurements in a scanning electron microscope. Intensity is found to increase with pore diameter, an effect they attribute to changes in the optical extraction efficiencies. A systematic redshift observed in the CL peak is attributed to local relaxation of the compressive stress present in the starting GaN epilayer.

UR - http://www.scopus.com/inward/record.url?scp=34548504986&partnerID=8YFLogxK

U2 - 10.1063/1.2783474

DO - 10.1063/1.2783474

M3 - Article

AN - SCOPUS:34548504986

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103115

ER -

Influence of photonic nanotexture on the light extraction efficiency of GaN

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