Influence of photonic nanotexture on the light extraction efficiency of GaN

L. Tian, N. Stojanovic, D. Y. Song, A. A. Bernussi, J. M. Berg, M. Holtz

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Abstract

The authors report the effects of nanoscale texturing on the optical properties of GaN. The texture consists of circular holes etched in a hexagonal array with 1 μm spacing. Hole diameters range from 120 to 700 nm and depths range up to 1 μm. The optical properties are studied using cathodoluminescence (CL) measurements in a scanning electron microscope. Intensity is found to increase with pore diameter, an effect they attribute to changes in the optical extraction efficiencies. A systematic redshift observed in the CL peak is attributed to local relaxation of the compressive stress present in the starting GaN epilayer.

Original languageEnglish
Article number103115
JournalApplied Physics Letters
Volume91
Issue number10
DOIs
StatePublished - 2007

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