The authors report the effects of nanoscale texturing on the optical properties of GaN. The texture consists of circular holes etched in a hexagonal array with 1 μm spacing. Hole diameters range from 120 to 700 nm and depths range up to 1 μm. The optical properties are studied using cathodoluminescence (CL) measurements in a scanning electron microscope. Intensity is found to increase with pore diameter, an effect they attribute to changes in the optical extraction efficiencies. A systematic redshift observed in the CL peak is attributed to local relaxation of the compressive stress present in the starting GaN epilayer.