Influence of phonons on the temperature dependence of the band gap of AlN and AlxGa1-xN alloys with high AlN mole fraction

S. Sohal, W. Feng, M. Pandikunta, V. V. Kuryatkov, S. A. Nikishin, M. Holtz

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Abstract

The temperature dependence of the optical band gap of AlN and Al xGa1-xN alloys, with x ∼ 0.6, has been studied using optical absorption spectroscopy. The band gap shrinkage is interpreted based on electron-phonon interactions using a two-phonon oscillator model. The two-oscillator model includes average acoustic and optic phonon energies and thermal occupation factor described by the Bose function. The temperature dependence of the transition width, from transparent to opaque, is also described based on electron-phonon interactions.

Original languageEnglish
Article number043501
JournalJournal of Applied Physics
Volume113
Issue number4
DOIs
StatePublished - Jan 28 2013

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