Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration

M. E. Holtz, I. Gherasoiu, V. Kuryatkov, S. A. Nikishin, A. A. Bernussi, M. W. Holtz

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Abstract

We report the temperature dependence of photoluminescence (PL) spectra for InN. For a free-carrier concentration n=5.9× 1017 cm-3 and low temperature, the main PL band is observed at 0.669 eV. The PL shift and broadening are described from 20 to 300 K based on electron-phonon interactions. Two discrete phonon sidebands (PSBs) are observed with corresponding phonon energy of ∼69 meV. The PSB temperature shift and linewidth broadening are well described by previous theory.

Original languageEnglish
Article number063702
JournalJournal of Applied Physics
Volume105
Issue number6
DOIs
StatePublished - 2009

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