Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration

M. E. Holtz; I. Gherasoiu; V. Kuryatkov; S. A. Nikishin; A. A. Bernussi; M. W. Holtz

doi:10.1063/1.3078775

Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration

M. E. Holtz, I. Gherasoiu, V. Kuryatkov, S. A. Nikishin, A. A. Bernussi, M. W. Holtz

Electrical and Computer Engineering

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20 Scopus citations

Abstract

We report the temperature dependence of photoluminescence (PL) spectra for InN. For a free-carrier concentration n=5.9× 1017 cm-3 and low temperature, the main PL band is observed at 0.669 eV. The PL shift and broadening are described from 20 to 300 K based on electron-phonon interactions. Two discrete phonon sidebands (PSBs) are observed with corresponding phonon energy of ∼69 meV. The PSB temperature shift and linewidth broadening are well described by previous theory.

Original language	English
Article number	063702
Journal	Journal of Applied Physics
Volume	105
Issue number	6
DOIs	https://doi.org/10.1063/1.3078775
State	Published - 2009

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Holtz, M. E., Gherasoiu, I., Kuryatkov, V., Nikishin, S. A., Bernussi, A. A., & Holtz, M. W. (2009). Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration. Journal of Applied Physics, 105(6), [063702]. https://doi.org/10.1063/1.3078775

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abstract = "We report the temperature dependence of photoluminescence (PL) spectra for InN. For a free-carrier concentration n=5.9× 1017 cm-3 and low temperature, the main PL band is observed at 0.669 eV. The PL shift and broadening are described from 20 to 300 K based on electron-phonon interactions. Two discrete phonon sidebands (PSBs) are observed with corresponding phonon energy of ∼69 meV. The PSB temperature shift and linewidth broadening are well described by previous theory.",

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AU - Holtz, M. E.

AU - Gherasoiu, I.

AU - Kuryatkov, V.

AU - Nikishin, S. A.

AU - Bernussi, A. A.

AU - Holtz, M. W.

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N2 - We report the temperature dependence of photoluminescence (PL) spectra for InN. For a free-carrier concentration n=5.9× 1017 cm-3 and low temperature, the main PL band is observed at 0.669 eV. The PL shift and broadening are described from 20 to 300 K based on electron-phonon interactions. Two discrete phonon sidebands (PSBs) are observed with corresponding phonon energy of ∼69 meV. The PSB temperature shift and linewidth broadening are well described by previous theory.

AB - We report the temperature dependence of photoluminescence (PL) spectra for InN. For a free-carrier concentration n=5.9× 1017 cm-3 and low temperature, the main PL band is observed at 0.669 eV. The PL shift and broadening are described from 20 to 300 K based on electron-phonon interactions. Two discrete phonon sidebands (PSBs) are observed with corresponding phonon energy of ∼69 meV. The PSB temperature shift and linewidth broadening are well described by previous theory.

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