Abstract
We report the temperature dependence of photoluminescence (PL) spectra for InN. For a free-carrier concentration n=5.9× 1017 cm-3 and low temperature, the main PL band is observed at 0.669 eV. The PL shift and broadening are described from 20 to 300 K based on electron-phonon interactions. Two discrete phonon sidebands (PSBs) are observed with corresponding phonon energy of ∼69 meV. The PSB temperature shift and linewidth broadening are well described by previous theory.
Original language | English |
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Article number | 063702 |
Journal | Journal of Applied Physics |
Volume | 105 |
Issue number | 6 |
DOIs | |
State | Published - 2009 |