Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration

M. E. Holtz; I. Gherasoiu; V. Kuryatkov; S. A. Nikishin; A. A. Bernussi; M. W. Holtz

doi:10.1063/1.3078775

Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration

M. E. Holtz, I. Gherasoiu, V. Kuryatkov, S. A. Nikishin, A. A. Bernussi, M. W. Holtz

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We report the temperature dependence of photoluminescence (PL) spectra for InN. For a free-carrier concentration n=5.9× 1017 cm-3 and low temperature, the main PL band is observed at 0.669 eV. The PL shift and broadening are described from 20 to 300 K based on electron-phonon interactions. Two discrete phonon sidebands (PSBs) are observed with corresponding phonon energy of ∼69 meV. The PSB temperature shift and linewidth broadening are well described by previous theory.

Original language	English
Article number	063702
Journal	Journal of Applied Physics
Volume	105
Issue number	6
DOIs	https://doi.org/10.1063/1.3078775
State	Published - 2009

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@article{07eaaa5f9fa546758cc5031652c1fefa,

title = "Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration",

abstract = "We report the temperature dependence of photoluminescence (PL) spectra for InN. For a free-carrier concentration n=5.9× 1017 cm-3 and low temperature, the main PL band is observed at 0.669 eV. The PL shift and broadening are described from 20 to 300 K based on electron-phonon interactions. Two discrete phonon sidebands (PSBs) are observed with corresponding phonon energy of ∼69 meV. The PSB temperature shift and linewidth broadening are well described by previous theory.",

author = "Holtz, {M. E.} and I. Gherasoiu and V. Kuryatkov and Nikishin, {S. A.} and Bernussi, {A. A.} and Holtz, {M. W.}",

note = "Funding Information: This work was supported in part by the National Science Foundation (Grant No. ECS-0609416), U.S. Army CERDEC Contract (No. W15P7T-07-D-P040), and the J. F Maddox Foundation. We thank Veeco Instr., Inc., for the InN samples.",

year = "2009",

doi = "10.1063/1.3078775",

language = "English",

volume = "105",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "6",

}

TY - JOUR

T1 - Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration

AU - Holtz, M. E.

AU - Gherasoiu, I.

AU - Kuryatkov, V.

AU - Nikishin, S. A.

AU - Bernussi, A. A.

AU - Holtz, M. W.

N1 - Funding Information: This work was supported in part by the National Science Foundation (Grant No. ECS-0609416), U.S. Army CERDEC Contract (No. W15P7T-07-D-P040), and the J. F Maddox Foundation. We thank Veeco Instr., Inc., for the InN samples.

PY - 2009

Y1 - 2009

N2 - We report the temperature dependence of photoluminescence (PL) spectra for InN. For a free-carrier concentration n=5.9× 1017 cm-3 and low temperature, the main PL band is observed at 0.669 eV. The PL shift and broadening are described from 20 to 300 K based on electron-phonon interactions. Two discrete phonon sidebands (PSBs) are observed with corresponding phonon energy of ∼69 meV. The PSB temperature shift and linewidth broadening are well described by previous theory.

AB - We report the temperature dependence of photoluminescence (PL) spectra for InN. For a free-carrier concentration n=5.9× 1017 cm-3 and low temperature, the main PL band is observed at 0.669 eV. The PL shift and broadening are described from 20 to 300 K based on electron-phonon interactions. Two discrete phonon sidebands (PSBs) are observed with corresponding phonon energy of ∼69 meV. The PSB temperature shift and linewidth broadening are well described by previous theory.

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U2 - 10.1063/1.3078775

DO - 10.1063/1.3078775

M3 - Article

AN - SCOPUS:63749123485

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

M1 - 063702

ER -

Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration

Abstract

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