Inductive switching of 4H-SiC gate turn-off thyristors

S. B. Bayne; C. W. Tipton; T. Griffin; C. J. Scozzie; B. Geil; A. K. Agarwal; J. Richmond

doi:10.1109/LED.2002.1004221

Inductive switching of 4H-SiC gate turn-off thyristors

S. B. Bayne, C. W. Tipton, T. Griffin, C. J. Scozzie, B. Geil, A. K. Agarwal, J. Richmond

Electrical and Computer Engineering

Research output: Contribution to journal › Letter › peer-review

4 Scopus citations

Abstract

The high-temperature operation of a silicon carbide gate turn-off thyristor is evaluated for use in inductively loaded switching circuits. Compared to purely resistive load elements, inductive loads subject the switching device to higher internal power dissipation. The ability of silicon carbide components to operate at elevated temperatures and high power dissipations are important factors for their use in future power conversion/control systems. In this work, a maximum current density of 540 A/cm ² at 600 V was switched at a frequency of 2 kHz and at several case temperatures up to 150°C. The turn-off and turn-on characteristics of the thyristor are discussed.

Original language	English
Pages (from-to)	318-320
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	6
DOIs	https://doi.org/10.1109/LED.2002.1004221
State	Published - Jun 2002

Keywords

Gate turn-off thyristor
Power conversion
Silicon carbide
Switching circuits
Thyristor circuits

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10.1109/LED.2002.1004221

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title = "Inductive switching of 4H-SiC gate turn-off thyristors",

abstract = "The high-temperature operation of a silicon carbide gate turn-off thyristor is evaluated for use in inductively loaded switching circuits. Compared to purely resistive load elements, inductive loads subject the switching device to higher internal power dissipation. The ability of silicon carbide components to operate at elevated temperatures and high power dissipations are important factors for their use in future power conversion/control systems. In this work, a maximum current density of 540 A/cm 2 at 600 V was switched at a frequency of 2 kHz and at several case temperatures up to 150°C. The turn-off and turn-on characteristics of the thyristor are discussed.",

keywords = "Gate turn-off thyristor, Power conversion, Silicon carbide, Switching circuits, Thyristor circuits",

author = "Bayne, {S. B.} and Tipton, {C. W.} and T. Griffin and Scozzie, {C. J.} and B. Geil and Agarwal, {A. K.} and J. Richmond",

year = "2002",

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pages = "318--320",

journal = "IEEE Electron Device Letters",

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T1 - Inductive switching of 4H-SiC gate turn-off thyristors

AU - Bayne, S. B.

AU - Tipton, C. W.

AU - Griffin, T.

AU - Scozzie, C. J.

AU - Geil, B.

AU - Agarwal, A. K.

AU - Richmond, J.

PY - 2002/6

Y1 - 2002/6

N2 - The high-temperature operation of a silicon carbide gate turn-off thyristor is evaluated for use in inductively loaded switching circuits. Compared to purely resistive load elements, inductive loads subject the switching device to higher internal power dissipation. The ability of silicon carbide components to operate at elevated temperatures and high power dissipations are important factors for their use in future power conversion/control systems. In this work, a maximum current density of 540 A/cm 2 at 600 V was switched at a frequency of 2 kHz and at several case temperatures up to 150°C. The turn-off and turn-on characteristics of the thyristor are discussed.

AB - The high-temperature operation of a silicon carbide gate turn-off thyristor is evaluated for use in inductively loaded switching circuits. Compared to purely resistive load elements, inductive loads subject the switching device to higher internal power dissipation. The ability of silicon carbide components to operate at elevated temperatures and high power dissipations are important factors for their use in future power conversion/control systems. In this work, a maximum current density of 540 A/cm 2 at 600 V was switched at a frequency of 2 kHz and at several case temperatures up to 150°C. The turn-off and turn-on characteristics of the thyristor are discussed.

KW - Gate turn-off thyristor

KW - Power conversion

KW - Silicon carbide

KW - Switching circuits

KW - Thyristor circuits

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DO - 10.1109/LED.2002.1004221

M3 - Letter

AN - SCOPUS:0036611242

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VL - 23

SP - 318

EP - 320

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

Inductive switching of 4H-SiC gate turn-off thyristors

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