Inductive switching of 4H-SiC gate turn-off thyristors

S. B. Bayne, C. W. Tipton, T. Griffin, C. J. Scozzie, B. Geil, A. K. Agarwal, J. Richmond

Research output: Contribution to journalLetterpeer-review

4 Scopus citations

Abstract

The high-temperature operation of a silicon carbide gate turn-off thyristor is evaluated for use in inductively loaded switching circuits. Compared to purely resistive load elements, inductive loads subject the switching device to higher internal power dissipation. The ability of silicon carbide components to operate at elevated temperatures and high power dissipations are important factors for their use in future power conversion/control systems. In this work, a maximum current density of 540 A/cm 2 at 600 V was switched at a frequency of 2 kHz and at several case temperatures up to 150°C. The turn-off and turn-on characteristics of the thyristor are discussed.

Original languageEnglish
Pages (from-to)318-320
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number6
DOIs
StatePublished - Jun 2002

Keywords

  • Gate turn-off thyristor
  • Power conversion
  • Silicon carbide
  • Switching circuits
  • Thyristor circuits

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