TY - JOUR
T1 - In situ pyrometric interferometry for molecular beam epitaxy of AlxGa1-xN on Si (111)
AU - Nikishin, S. A.
AU - Francoeur, S.
AU - Temkin, H.
N1 - Funding Information:
The authors would like to thank Dr. V. Tretyakov for EPMA measurements. Work at TTU is supported by DARPA (monitored by Drs. Elias Towe and Edgar J. Martinez), SBCCOM (under DAAD 13-00-C-0060), CRDF (under RE1-2217), and the J. F Maddox Foundation.
PY - 2001
Y1 - 2001
N2 - We apply pyrometric interferometry to control the growth of GaN, AlN, and AlxGa1-xN on Si (111) by molecular beam epitaxy. We show that the period of intensity oscillations in the temperature measured by the pyrometer is caused by optical interference in the growing nitride layer. The period of oscillations is inversely proportional to the growth rate. This effect is used for in-situ measurement of the growth rate of GaN, AlN, and AlxGa1-xN (for 0<×<1). We also show that pyrometric interferometery can be used for in-situ determination of the composition of the growing layer.
AB - We apply pyrometric interferometry to control the growth of GaN, AlN, and AlxGa1-xN on Si (111) by molecular beam epitaxy. We show that the period of intensity oscillations in the temperature measured by the pyrometer is caused by optical interference in the growing nitride layer. The period of oscillations is inversely proportional to the growth rate. This effect is used for in-situ measurement of the growth rate of GaN, AlN, and AlxGa1-xN (for 0<×<1). We also show that pyrometric interferometery can be used for in-situ determination of the composition of the growing layer.
UR - http://www.scopus.com/inward/record.url?scp=0035558620&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0035558620
SN - 0272-9172
VL - 639
SP - G6.57.1-G6.57.5
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - GaN and Related Alloys 2000
Y2 - 27 November 2000 through 1 December 2000
ER -