In situ pyrometric interferometry for molecular beam epitaxy of AlxGa1-xN on Si (111)

S. A. Nikishin, S. Francoeur, H. Temkin

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We apply pyrometric interferometry to control the growth of GaN, AlN, and AlxGa1-xN on Si (111) by molecular beam epitaxy. We show that the period of intensity oscillations in the temperature measured by the pyrometer is caused by optical interference in the growing nitride layer. The period of oscillations is inversely proportional to the growth rate. This effect is used for in-situ measurement of the growth rate of GaN, AlN, and AlxGa1-xN (for 0<×<1). We also show that pyrometric interferometery can be used for in-situ determination of the composition of the growing layer.

Original languageEnglish
Pages (from-to)G6.57.1-G6.57.5
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2001
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: Nov 27 2000Dec 1 2000


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