In situ Hall effect measurement on diamond anvil cell under high pressure

Tingjing Hu; Xiaoyan Cui; Yang Gao; Yonghao Han; Cailong Liu; Bao Liu; Hongwu Liu; Yanzhang Ma; Chunxiao Gao

doi:10.1063/1.3501384

In situ Hall effect measurement on diamond anvil cell under high pressure

Tingjing Hu, Xiaoyan Cui, Yang Gao, Yonghao Han, Cailong Liu, Bao Liu, Hongwu Liu, Yanzhang Ma, Chunxiao Gao

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

A method for in situ Hall effect measurement under high pressure was developed on a diamond anvil cell. The electrode was accurately integrated on one diamond anvil with regular shape. A uniform and strong magnetic field was introduced into the sample zone. The voltage errors brought by some negative effects during the measurement were well eliminated. The correction factor of the Hall coefficient, brought by the nonpoint contact between the electrode and the sample, was 4.51%. The measurement error of the magnetic field did not exceed 1%. The carrier character of ZnTe powders was studied up to 23 GPa. The evolution of conductivity with pressure was explained based on the variation of the carrier behavior.

Original language	English
Article number	115101
Journal	Review of Scientific Instruments
Volume	81
Issue number	11
DOIs	https://doi.org/10.1063/1.3501384
State	Published - Nov 2010

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@article{bc1c79775dbc44e18da2576fb321c7cd,

title = "In situ Hall effect measurement on diamond anvil cell under high pressure",

abstract = "A method for in situ Hall effect measurement under high pressure was developed on a diamond anvil cell. The electrode was accurately integrated on one diamond anvil with regular shape. A uniform and strong magnetic field was introduced into the sample zone. The voltage errors brought by some negative effects during the measurement were well eliminated. The correction factor of the Hall coefficient, brought by the nonpoint contact between the electrode and the sample, was 4.51%. The measurement error of the magnetic field did not exceed 1%. The carrier character of ZnTe powders was studied up to 23 GPa. The evolution of conductivity with pressure was explained based on the variation of the carrier behavior.",

author = "Tingjing Hu and Xiaoyan Cui and Yang Gao and Yonghao Han and Cailong Liu and Bao Liu and Hongwu Liu and Yanzhang Ma and Chunxiao Gao",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Grant Nos. 10874053, 50802033, and 50532020), by the National Basic Research Program of China (Grant Nos. 2005CB724404 and 2011CB808204), by the PCSIRT Project (Grant No. IRT0625), and by the National Found for Fostering Talents of Basic Science (Grant No. J0730311).",

year = "2010",

month = nov,

doi = "10.1063/1.3501384",

language = "English",

volume = "81",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

number = "11",

}

TY - JOUR

T1 - In situ Hall effect measurement on diamond anvil cell under high pressure

AU - Hu, Tingjing

AU - Cui, Xiaoyan

AU - Gao, Yang

AU - Han, Yonghao

AU - Liu, Cailong

AU - Liu, Bao

AU - Liu, Hongwu

AU - Ma, Yanzhang

AU - Gao, Chunxiao

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Grant Nos. 10874053, 50802033, and 50532020), by the National Basic Research Program of China (Grant Nos. 2005CB724404 and 2011CB808204), by the PCSIRT Project (Grant No. IRT0625), and by the National Found for Fostering Talents of Basic Science (Grant No. J0730311).

PY - 2010/11

Y1 - 2010/11

N2 - A method for in situ Hall effect measurement under high pressure was developed on a diamond anvil cell. The electrode was accurately integrated on one diamond anvil with regular shape. A uniform and strong magnetic field was introduced into the sample zone. The voltage errors brought by some negative effects during the measurement were well eliminated. The correction factor of the Hall coefficient, brought by the nonpoint contact between the electrode and the sample, was 4.51%. The measurement error of the magnetic field did not exceed 1%. The carrier character of ZnTe powders was studied up to 23 GPa. The evolution of conductivity with pressure was explained based on the variation of the carrier behavior.

AB - A method for in situ Hall effect measurement under high pressure was developed on a diamond anvil cell. The electrode was accurately integrated on one diamond anvil with regular shape. A uniform and strong magnetic field was introduced into the sample zone. The voltage errors brought by some negative effects during the measurement were well eliminated. The correction factor of the Hall coefficient, brought by the nonpoint contact between the electrode and the sample, was 4.51%. The measurement error of the magnetic field did not exceed 1%. The carrier character of ZnTe powders was studied up to 23 GPa. The evolution of conductivity with pressure was explained based on the variation of the carrier behavior.

UR - http://www.scopus.com/inward/record.url?scp=78650280255&partnerID=8YFLogxK

U2 - 10.1063/1.3501384

DO - 10.1063/1.3501384

M3 - Article

C2 - 21133495

AN - SCOPUS:78650280255

SN - 0034-6748

VL - 81

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 11

M1 - 115101

ER -

In situ Hall effect measurement on diamond anvil cell under high pressure

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