TY - JOUR
T1 - In situ conductivity measurement of matter under extreme conditions by film fabrication on diamond anvil cell
AU - Gao, Chunxiao
AU - He, Chunyuan
AU - Li, Ming
AU - Han, Yonghao
AU - Ma, Yanzhang
AU - Zou, Guangtian
N1 - Funding Information:
This work is supported by the National Natural Science Foundation of China (Grant nos. 40473034, 10574055 and 50532020), the National Basic Research Program of China (Grant no. 2005CB724404), the PCSIRT (IRT0625) and the National Science Foundation of the United States (Grant no. DMR-0619215).
PY - 2008/9
Y1 - 2008/9
N2 - The film-fabricating technology has been used to prepare the microcircuit on diamond anvil for resistivity measurement under extreme conditions. We chose molybdenum as the electrode material and alumina as the insulator and protective material. The sample thickness measurement was conducted and then the resistivity correction was performed under different thickness. The experimental error was proved to be less than 10%. By mounting alumina film between diamond anvil and microcircuit, high-temperature performance of a laser heating diamond anvil cell was improved obviously, which is available for in situ resistivity measurement under high pressure and high temperature. Meanwhile, the impedance spectroscopy of a powdered semiconductor sample was detected. Through the impedance arcs obtained, the grain boundary contribution to the resistivity can be well distinguished.
AB - The film-fabricating technology has been used to prepare the microcircuit on diamond anvil for resistivity measurement under extreme conditions. We chose molybdenum as the electrode material and alumina as the insulator and protective material. The sample thickness measurement was conducted and then the resistivity correction was performed under different thickness. The experimental error was proved to be less than 10%. By mounting alumina film between diamond anvil and microcircuit, high-temperature performance of a laser heating diamond anvil cell was improved obviously, which is available for in situ resistivity measurement under high pressure and high temperature. Meanwhile, the impedance spectroscopy of a powdered semiconductor sample was detected. Through the impedance arcs obtained, the grain boundary contribution to the resistivity can be well distinguished.
KW - A. Thin films
KW - B. Vapour deposition
KW - C. High pressure
KW - D. Electrical properties
UR - http://www.scopus.com/inward/record.url?scp=50949130670&partnerID=8YFLogxK
U2 - 10.1016/j.jpcs.2008.03.027
DO - 10.1016/j.jpcs.2008.03.027
M3 - Article
AN - SCOPUS:50949130670
SN - 0022-3697
VL - 69
SP - 2199
EP - 2203
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
IS - 9
ER -