In situ conductivity measurement of matter under extreme conditions by film fabrication on diamond anvil cell

Chunxiao Gao, Chunyuan He, Ming Li, Yonghao Han, Yanzhang Ma, Guangtian Zou

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The film-fabricating technology has been used to prepare the microcircuit on diamond anvil for resistivity measurement under extreme conditions. We chose molybdenum as the electrode material and alumina as the insulator and protective material. The sample thickness measurement was conducted and then the resistivity correction was performed under different thickness. The experimental error was proved to be less than 10%. By mounting alumina film between diamond anvil and microcircuit, high-temperature performance of a laser heating diamond anvil cell was improved obviously, which is available for in situ resistivity measurement under high pressure and high temperature. Meanwhile, the impedance spectroscopy of a powdered semiconductor sample was detected. Through the impedance arcs obtained, the grain boundary contribution to the resistivity can be well distinguished.

Original languageEnglish
Pages (from-to)2199-2203
Number of pages5
JournalJournal of Physics and Chemistry of Solids
Volume69
Issue number9
DOIs
StatePublished - Sep 2008

Keywords

  • A. Thin films
  • B. Vapour deposition
  • C. High pressure
  • D. Electrical properties

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