TY - JOUR
T1 - Impurity level evolution and majority carrier-type inversion of Ag 2S under extreme compression
T2 - Experimental and theoretical approaches
AU - Zhang, Junkai
AU - Liu, Cailong
AU - Zhang, Xin
AU - Ke, Feng
AU - Han, Yonghao
AU - Peng, Gang
AU - Ma, Yanzhang
AU - Gao, Chunxiao
N1 - Funding Information:
This work was supported by the National Basic Research Program of China (Grant No. 2011CB808204) and the National Natural Science Foundation of China (Grant Nos. 91014004, 11074094, 10874053, and 50802033).
PY - 2013/8/19
Y1 - 2013/8/19
N2 - The ability to probe charge carriers transport behavior under pressure has the potential to unlock many key questions in photoconduction, resistive switch, solid ion transport, etc. We utilize the Hall-effect measurements and the first-principles calculations on Ag2S to reveal the pressure induced changes in its electrical transport parameters. Beyond 7.8 GPa, the donor level in modified monoclinic phase moves away from the conduction-band minimum as the pressure increases, and then Ag2S changes its dominant majority carriers from electrons to holes around 13.5 GPa. Additionally, increasing the pressure makes the electrical resistivity of Ag2S trend to decrease with temperature. At 15.8 GPa, Ag2S undergoes a transformation from metallic-like conduction to semiconductor conduction. These results are beneficial to achieve unique properties of high-pressure phases and develop Ag2S applications under ambient or extreme conditions.
AB - The ability to probe charge carriers transport behavior under pressure has the potential to unlock many key questions in photoconduction, resistive switch, solid ion transport, etc. We utilize the Hall-effect measurements and the first-principles calculations on Ag2S to reveal the pressure induced changes in its electrical transport parameters. Beyond 7.8 GPa, the donor level in modified monoclinic phase moves away from the conduction-band minimum as the pressure increases, and then Ag2S changes its dominant majority carriers from electrons to holes around 13.5 GPa. Additionally, increasing the pressure makes the electrical resistivity of Ag2S trend to decrease with temperature. At 15.8 GPa, Ag2S undergoes a transformation from metallic-like conduction to semiconductor conduction. These results are beneficial to achieve unique properties of high-pressure phases and develop Ag2S applications under ambient or extreme conditions.
UR - http://www.scopus.com/inward/record.url?scp=84883373470&partnerID=8YFLogxK
U2 - 10.1063/1.4819160
DO - 10.1063/1.4819160
M3 - Article
AN - SCOPUS:84883373470
VL - 103
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 8
M1 - 082116
ER -