Improving Fast SiC MOSFET Switching Using an Inductive Gate Drive Approach

M. Lapointe; L. Collier; T. Kajiwara; J. Dickens; J. Mankowski; A. Neuber

doi:10.1109/PPPS34859.2019.9009986

Improving Fast SiC MOSFET Switching Using an Inductive Gate Drive Approach

M. Lapointe, L. Collier, T. Kajiwara, J. Dickens, J. Mankowski, A. Neuber

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

An innovative gating scheme for wide bandgap semiconductor switches is investigated to fully exploit recent advances of SiC MOSFET properties in hold-off voltage (from single digits to tens of kV) and low on-state resistance (tens of mΩ). Robust gate driving techniques are required to achieve fast risetimes on the order of 10-20 ns. Further, due to the high dI/dt, and subsequent inductive kickback, parasitic inductance may drastically affect the performance of commercially available totem-pole gate drivers. Further, traditionally packaged MOSFETs exhibit additional degradation of switching characteristics due to the introduction of parasitics primarily due to their lead geometry.

Original language	English
Title of host publication	2019 IEEE Pulsed Power and Plasma Science, PPPS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538679692
DOIs	https://doi.org/10.1109/PPPS34859.2019.9009986
State	Published - Jun 2019
Event	2019 IEEE Pulsed Power and Plasma Science, PPPS 2019 - Orlando, United States Duration: Jun 23 2019 → Jun 29 2019

Publication series

Name	IEEE International Pulsed Power Conference
Volume	2019-June
ISSN (Print)	2158-4915
ISSN (Electronic)	2158-4923

Conference

Conference	2019 IEEE Pulsed Power and Plasma Science, PPPS 2019
Country/Territory	United States
City	Orlando
Period	06/23/19 → 06/29/19

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10.1109/PPPS34859.2019.9009986

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Lapointe, M., Collier, L., Kajiwara, T., Dickens, J., Mankowski, J., & Neuber, A. (2019). Improving Fast SiC MOSFET Switching Using an Inductive Gate Drive Approach. In 2019 IEEE Pulsed Power and Plasma Science, PPPS 2019 Article 9009986 (IEEE International Pulsed Power Conference; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PPPS34859.2019.9009986

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title = "Improving Fast SiC MOSFET Switching Using an Inductive Gate Drive Approach",

abstract = "An innovative gating scheme for wide bandgap semiconductor switches is investigated to fully exploit recent advances of SiC MOSFET properties in hold-off voltage (from single digits to tens of kV) and low on-state resistance (tens of mΩ). Robust gate driving techniques are required to achieve fast risetimes on the order of 10-20 ns. Further, due to the high dI/dt, and subsequent inductive kickback, parasitic inductance may drastically affect the performance of commercially available totem-pole gate drivers. Further, traditionally packaged MOSFETs exhibit additional degradation of switching characteristics due to the introduction of parasitics primarily due to their lead geometry.",

author = "M. Lapointe and L. Collier and T. Kajiwara and J. Dickens and J. Mankowski and A. Neuber",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE Pulsed Power and Plasma Science, PPPS 2019 ; Conference date: 23-06-2019 Through 29-06-2019",

year = "2019",

month = jun,

doi = "10.1109/PPPS34859.2019.9009986",

language = "English",

series = "IEEE International Pulsed Power Conference",

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Lapointe, M, Collier, L, Kajiwara, T, Dickens, J , Mankowski, J & Neuber, A 2019, Improving Fast SiC MOSFET Switching Using an Inductive Gate Drive Approach. in 2019 IEEE Pulsed Power and Plasma Science, PPPS 2019., 9009986, IEEE International Pulsed Power Conference, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE Pulsed Power and Plasma Science, PPPS 2019, Orlando, United States, 06/23/19. https://doi.org/10.1109/PPPS34859.2019.9009986

Improving Fast SiC MOSFET Switching Using an Inductive Gate Drive Approach. / Lapointe, M.; Collier, L.; Kajiwara, T. et al.
2019 IEEE Pulsed Power and Plasma Science, PPPS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 9009986 (IEEE International Pulsed Power Conference; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Neuber, A.

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N2 - An innovative gating scheme for wide bandgap semiconductor switches is investigated to fully exploit recent advances of SiC MOSFET properties in hold-off voltage (from single digits to tens of kV) and low on-state resistance (tens of mΩ). Robust gate driving techniques are required to achieve fast risetimes on the order of 10-20 ns. Further, due to the high dI/dt, and subsequent inductive kickback, parasitic inductance may drastically affect the performance of commercially available totem-pole gate drivers. Further, traditionally packaged MOSFETs exhibit additional degradation of switching characteristics due to the introduction of parasitics primarily due to their lead geometry.

AB - An innovative gating scheme for wide bandgap semiconductor switches is investigated to fully exploit recent advances of SiC MOSFET properties in hold-off voltage (from single digits to tens of kV) and low on-state resistance (tens of mΩ). Robust gate driving techniques are required to achieve fast risetimes on the order of 10-20 ns. Further, due to the high dI/dt, and subsequent inductive kickback, parasitic inductance may drastically affect the performance of commercially available totem-pole gate drivers. Further, traditionally packaged MOSFETs exhibit additional degradation of switching characteristics due to the introduction of parasitics primarily due to their lead geometry.

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BT - 2019 IEEE Pulsed Power and Plasma Science, PPPS 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE Pulsed Power and Plasma Science, PPPS 2019

Y2 - 23 June 2019 through 29 June 2019

ER -

Improving Fast SiC MOSFET Switching Using an Inductive Gate Drive Approach

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