Improving Fast SiC MOSFET Switching Using an Inductive Gate Drive Approach

M. Lapointe, L. Collier, T. Kajiwara, J. Dickens, J. Mankowski, A. Neuber

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An innovative gating scheme for wide bandgap semiconductor switches is investigated to fully exploit recent advances of SiC MOSFET properties in hold-off voltage (from single digits to tens of kV) and low on-state resistance (tens of mΩ). Robust gate driving techniques are required to achieve fast risetimes on the order of 10-20 ns. Further, due to the high dI/dt, and subsequent inductive kickback, parasitic inductance may drastically affect the performance of commercially available totem-pole gate drivers. Further, traditionally packaged MOSFETs exhibit additional degradation of switching characteristics due to the introduction of parasitics primarily due to their lead geometry.

Original languageEnglish
Title of host publication2019 IEEE Pulsed Power and Plasma Science, PPPS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538679692
DOIs
StatePublished - Jun 2019
Event2019 IEEE Pulsed Power and Plasma Science, PPPS 2019 - Orlando, United States
Duration: Jun 23 2019Jun 29 2019

Publication series

NameIEEE International Pulsed Power Conference
Volume2019-June
ISSN (Print)2158-4915
ISSN (Electronic)2158-4923

Conference

Conference2019 IEEE Pulsed Power and Plasma Science, PPPS 2019
CountryUnited States
CityOrlando
Period06/23/1906/29/19

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