Impact of power cell design on RF performance of CE and CB SiGe Power HBTs

Guoxuan Qin, Zhenqiang Ma, Jerry Lopez, Donald Y.C. Lie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Large-signal power performance of SiGe power HBTs are compared between common-emitter (CE) and common-base (CB) configurations with different layout structures and different unit subcells. Experiment results show that at high frequency (6 GHz), CB SiGe power HBTs have both higher small-signal and large-signal power gain values than the CE configuration. With optimization of layout and unit subcells, the power performance of both CE and CB SiGe power HBTs is significantly improved. The CB SiGe HBTs maintain the superior power gain characteristics over the CE SiGe HBTs in high frequency range, while CE SiGe HBTs become superior to CB SiGe HBTs in the low frequency range. The reasons for the device performance improvement and rules of optimizing power cell layout are discussed.

Original languageEnglish
Title of host publication2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers, SiRF
Pages66-69
Number of pages4
DOIs
StatePublished - 2008
Event2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF - Orlando, FL, United States
Duration: Jan 23 2008Jan 25 2008

Publication series

Name2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systms - Digest of Papers, SiRF

Conference

Conference2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF
CountryUnited States
CityOrlando, FL
Period01/23/0801/25/08

Keywords

  • Common-base (CB)
  • Common-emitter (CE)
  • HBT
  • Power cell layout
  • RF power performance
  • SiGe

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    Qin, G., Ma, Z., Lopez, J., & Lie, D. Y. C. (2008). Impact of power cell design on RF performance of CE and CB SiGe Power HBTs. In 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers, SiRF (pp. 66-69). [4446257] (2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systms - Digest of Papers, SiRF). https://doi.org/10.1109/SMIC.2008.23