Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE

Wilson De Carvalho, Mario Tosi Furtado, Ayrton André Bernussi, Angelo Luiz Gobbi, Mônica Alonso Cotta

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We investigated the influence of the growth rate on the quality of zero-net-strained InGaAsP/InGaAsP/InP multiquantum well structures for 1.55 μm emission grown by low pressure metalorganic vapor phase epitaxy. The samples consisted of fixed compressive strained wells (ε = +1%) and tensile strained barriers (ε = -0.5%) grown with different quaternary bandgap wavelengths (λB = 1.1-1.4 μm). Using higher growth rates, we obtained for the first time high quality zero net strained multi quantum well structures, regardless having constant group V composition in the well and barriers. The samples were analyzed by x-ray diffraction, photoluminescence and atomic force microscopy techniques. The amplitude of surface modulation roughness along [011] direction decreased from 20 nm to 0.53 nm with increasing growth rate and/or quaternary compositions grown outside the miscibility gap. A new deep PL broad emission band strongly correlated with the onset of wavy layer growth is also reported. Broad area and ridge waveguide lasers with 10 wells exhibited low losses (34 cm-1) and low threshold current densities at infinite cavity length (1020 A·cm-2 and 1190 A·cm-2, respectively).

Original languageEnglish
Pages (from-to)62-68
Number of pages7
JournalJournal of Electronic Materials
Issue number1
StatePublished - Jan 2000


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