Impact of field-dependent electronic trapping across Coulomb repulsive potentials on low frequency charge oscillations

R. P. Joshi, K. H. Schoenbach, P. K. Raha

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We have performed Monte Carlo simulations to obtain the field dependence of electronic trapping across repulsive potentials in GaAs. Such repulsive centers are associated with deep level impurities having multiply charged states. Our results reveal a field-dependent maxima in the electronic capture coefficient, and the overall shape is seen to depend on the background electron density due to the effects of screening. Based on the Monte Carlo calculations, we have examined the stability of compensated semiconductors containing such repulsive centers. Our analysis indicates a potential for low frequency charge oscillations which is in keeping with available experimental data.

Original languageEnglish
Pages (from-to)4016-4021
Number of pages6
JournalJournal of Applied Physics
Volume75
Issue number8
DOIs
StatePublished - 1994

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