Imaging studies of strained InGaAsP/InP heterostructures by photoluminescence microscopy

A. A. Bernussi, W. Carvalho, M. T. Furtado, A. L. Gobbi, M. A. Cotta

Research output: Contribution to journalConference articlepeer-review

Abstract

Strained In1-xGaxAsyP1-y/InP single quantum wells grown by low-pressure metalorganic vapor phase epitaxy were investigated by photoluminescence microscopy imaging (PLM), photoluminescence spectroscopy, X-ray diffraction and atomic force microscopy techniques. PLM images of strained structures revealed the presence of a large number of non-radiative centers (dark spots). The dark spot density was found to be strongly dependent on tensile strain magnitude, barrier material and cap layer thickness. PLM images of highly tensile and compressive strained quaternary layers grown with the same structure exhibited quite different relaxation mechanisms.

Original languageEnglish
Pages (from-to)523-526
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - 1999
EventProceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz
Duration: May 16 1999May 20 1999

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