Imaging studies of strained InGaAsP/InP heterostructures by photoluminescence microscopy

A. A. Bernussi; W. Carvalho; M. T. Furtado; A. L. Gobbi; M. A. Cotta

Imaging studies of strained InGaAsP/InP heterostructures by photoluminescence microscopy

A. A. Bernussi, W. Carvalho, M. T. Furtado, A. L. Gobbi, M. A. Cotta

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Strained In_1-xGa_xAs_yP_1-y/InP single quantum wells grown by low-pressure metalorganic vapor phase epitaxy were investigated by photoluminescence microscopy imaging (PLM), photoluminescence spectroscopy, X-ray diffraction and atomic force microscopy techniques. PLM images of strained structures revealed the presence of a large number of non-radiative centers (dark spots). The dark spot density was found to be strongly dependent on tensile strain magnitude, barrier material and cap layer thickness. PLM images of highly tensile and compressive strained quaternary layers grown with the same structure exhibited quite different relaxation mechanisms.

Original language	English
Pages (from-to)	523-526
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 1999
Event	Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz Duration: May 16 1999 → May 20 1999

Cite this

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title = "Imaging studies of strained InGaAsP/InP heterostructures by photoluminescence microscopy",

abstract = "Strained In1-xGaxAsyP1-y/InP single quantum wells grown by low-pressure metalorganic vapor phase epitaxy were investigated by photoluminescence microscopy imaging (PLM), photoluminescence spectroscopy, X-ray diffraction and atomic force microscopy techniques. PLM images of strained structures revealed the presence of a large number of non-radiative centers (dark spots). The dark spot density was found to be strongly dependent on tensile strain magnitude, barrier material and cap layer thickness. PLM images of highly tensile and compressive strained quaternary layers grown with the same structure exhibited quite different relaxation mechanisms.",

author = "Bernussi, {A. A.} and W. Carvalho and Furtado, {M. T.} and Gobbi, {A. L.} and Cotta, {M. A.}",

year = "1999",

language = "English",

pages = "523--526",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

note = "null ; Conference date: 16-05-1999 Through 20-05-1999",

}

TY - JOUR

T1 - Imaging studies of strained InGaAsP/InP heterostructures by photoluminescence microscopy

AU - Bernussi, A. A.

AU - Carvalho, W.

AU - Furtado, M. T.

AU - Gobbi, A. L.

AU - Cotta, M. A.

PY - 1999

Y1 - 1999

N2 - Strained In1-xGaxAsyP1-y/InP single quantum wells grown by low-pressure metalorganic vapor phase epitaxy were investigated by photoluminescence microscopy imaging (PLM), photoluminescence spectroscopy, X-ray diffraction and atomic force microscopy techniques. PLM images of strained structures revealed the presence of a large number of non-radiative centers (dark spots). The dark spot density was found to be strongly dependent on tensile strain magnitude, barrier material and cap layer thickness. PLM images of highly tensile and compressive strained quaternary layers grown with the same structure exhibited quite different relaxation mechanisms.

AB - Strained In1-xGaxAsyP1-y/InP single quantum wells grown by low-pressure metalorganic vapor phase epitaxy were investigated by photoluminescence microscopy imaging (PLM), photoluminescence spectroscopy, X-ray diffraction and atomic force microscopy techniques. PLM images of strained structures revealed the presence of a large number of non-radiative centers (dark spots). The dark spot density was found to be strongly dependent on tensile strain magnitude, barrier material and cap layer thickness. PLM images of highly tensile and compressive strained quaternary layers grown with the same structure exhibited quite different relaxation mechanisms.

UR - http://www.scopus.com/inward/record.url?scp=0032638275&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032638275

SP - 523

EP - 526

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

Y2 - 16 May 1999 through 20 May 1999

ER -

Imaging studies of strained InGaAsP/InP heterostructures by photoluminescence microscopy

Abstract

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