III-Nitrides quantum structures for deep UV light emitters grown by molecular beam epitaxy

We have carried out development of short period superlattices (SPSLs) based on AlN/AlGaN for deep UV light emitting diodes (LEDs) using gas source molecular beam epitaxy with ammonia. These SPSLs, with respective well and barrier thickness from 0.5 to 1 nm and from 0.75 to 1.5 nm, have been shown to have energy gaps in the deep UV suitable for LEDs operating down to ~ 250 nm. We describe growth of SPSLs and extensive studies of their properties relevant to efficiency of radiative recombination using time resolve luminescence measurements. Doping mechanism and contact formation were investigated using temperature varied transmission line measurements to clarify the mechanism of current injection in low resistive Ohmic contacts.