III-nitride wide bandgap semiconductors for optical communications

H. X. Jiang, C. Ugolini, J. Y. Lin, J. M. Zavada

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The III-nitride materials have been at the central stage in the semiconductor R&D effort for the last decade with the main focus on photonic devices operating in the visible and UV regions. We believe that Ill-nitride photonics hold great promise for applications in optical communications at 1.55 μm. However, many fundamental issues must be addressed in order to realize this goal. For example, the optical propagation loss, temperature sensitivity, polarization effects in InGaNVAlGaN heterostructures, carrier-induced change of the index of refraction, modulation efficiency, and modulation induced polarization effects require further studies. Mechanisms that would enhance the Er emission at 1.55 μm in Er-doped nitrides must be further explored. Novel designs for device integration have to be developed. As further improvements in material quality as well as fundamental understandings are achieved, it is conceivable that the future of III-nitrides for optical communication applications will be as bright as for blue/green and UV applications.

Original languageEnglish
Title of host publication19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages36-37
Number of pages2
ISBN (Print)0780395557, 9780780395558
DOIs
StatePublished - Jan 1 2006
Event19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS - Montreal, QC, Canada
Duration: Oct 29 2006Nov 2 2006

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)1092-8081

Conference

Conference19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS
Country/TerritoryCanada
CityMontreal, QC
Period10/29/0611/2/06

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