@inproceedings{8c72c01c8e844d86bd6d5b6f5223e0cc,
title = "III-Nitride ultraviolet micro- and nano-photonics",
abstract = "This paper provides a brief overview on recent advances in the ultraviolet (UV) photonic materials and devices based upon III-nitrides and the exploitation of chiplevel innovation, such as the incorporation of micro- and nano-scale photonic device integration and photonic crystals (PCs), to enhance the extraction efficiency of UV light emitting diodes (LEDs). By inserting a high quality AlN epilayer that serves as a template for the subsequent growth of AlGaN alloys and adopting delta-doping scheme, we have greatly reduced the dislocation density and thereby enhanced the doping efficiency. By incorporating AlN and highly conductive n-AlGaN into the actual device structure, we have significantly improved the performance of deep UV LEDs (λ < 300 nm). It was shown that III-nitride PCs provide 3 times enhancement in output power and 4 times enhancement in modulation speed in UV LEDs. The demonstration of photonic band-gap (PBG) materials active in the UV and visible wavelengths opens many new applications.",
author = "Lin, {J. Y.} and Jiang, {H. X.}",
year = "2005",
language = "English",
isbn = "1557527709",
series = "Optics InfoBase Conference Papers",
publisher = "Optical Society of America",
booktitle = "Conference on Lasers and Electro-Optics, CLEO 2005",
note = "null ; Conference date: 22-05-2005 Through 22-05-2005",
}