TY - GEN
T1 - III-Nitride ultraviolet micro- and nano-photonics
AU - Lin, J. Y.
AU - Jiang, H. X.
PY - 2005
Y1 - 2005
N2 - This paper provides a brief overview on recent advances in the ultraviolet (UV) photonic materials and devices based upon III-nitrides and the exploitation of chiplevel innovation, such as the incorporation of micro- and nano-scale photonic device integration and photonic crystals (PCs), to enhance the extraction efficiency of UV light emitting diodes (LEDs). By inserting a high quality AlN epilayer that serves as a template for the subsequent growth of AlGaN alloys and adopting delta-doping scheme, we have greatly reduced the dislocation density and thereby enhanced the doping efficiency. By incorporating AlN and highly conductive n-AlGaN into the actual device structure, we have significantly improved the performance of deep UV LEDs (λ < 300 nm). It was shown that III-nitride PCs provide 3 times enhancement in output power and 4 times enhancement in modulation speed in UV LEDs. The demonstration of photonic band-gap (PBG) materials active in the UV and visible wavelengths opens many new applications.
AB - This paper provides a brief overview on recent advances in the ultraviolet (UV) photonic materials and devices based upon III-nitrides and the exploitation of chiplevel innovation, such as the incorporation of micro- and nano-scale photonic device integration and photonic crystals (PCs), to enhance the extraction efficiency of UV light emitting diodes (LEDs). By inserting a high quality AlN epilayer that serves as a template for the subsequent growth of AlGaN alloys and adopting delta-doping scheme, we have greatly reduced the dislocation density and thereby enhanced the doping efficiency. By incorporating AlN and highly conductive n-AlGaN into the actual device structure, we have significantly improved the performance of deep UV LEDs (λ < 300 nm). It was shown that III-nitride PCs provide 3 times enhancement in output power and 4 times enhancement in modulation speed in UV LEDs. The demonstration of photonic band-gap (PBG) materials active in the UV and visible wavelengths opens many new applications.
UR - http://www.scopus.com/inward/record.url?scp=84899157253&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84899157253
SN - 1557527709
SN - 9781557527707
T3 - Optics InfoBase Conference Papers
BT - Conference on Lasers and Electro-Optics, CLEO 2005
PB - Optical Society of America
T2 - Conference on Lasers and Electro-Optics, CLEO 2005
Y2 - 22 May 2005 through 22 May 2005
ER -