III-Nitride ultraviolet micro- and nano-photonics

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Abstract

This paper provides a brief overview on recent advances in the ultraviolet (UV) photonic materials and devices based upon III-nitrides and the exploitation of chiplevel innovation, such as the incorporation of micro- and nano-scale photonic device integration and photonic crystals (PCs), to enhance the extraction efficiency of UV light emitting diodes (LEDs). By inserting a high quality AlN epilayer that serves as a template for the subsequent growth of AlGaN alloys and adopting delta-doping scheme, we have greatly reduced the dislocation density and thereby enhanced the doping efficiency. By incorporating AlN and highly conductive n-AlGaN into the actual device structure, we have significantly improved the performance of deep UV LEDs (λ < 300 nm). It was shown that III-nitride PCs provide 3 times enhancement in output power and 4 times enhancement in modulation speed in UV LEDs. The demonstration of photonic band-gap (PBG) materials active in the UV and visible wavelengths opens many new applications.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2006
PublisherOptical Society of America
ISBN (Print)1557528136, 9781557528131
StatePublished - 2006
EventConference on Lasers and Electro-Optics, CLEO 2006 - Long Beach, CA, United States
Duration: May 21 2006May 21 2006

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2006
CountryUnited States
CityLong Beach, CA
Period05/21/0605/21/06

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