III-nitride ultraviolet micro- and nano-photonics

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This paper provides a brief overview on recent advances in the ultraviolet (UV) photonic materials and devices based upon III-nitrides and the exploitation of chiplevel innovation, such as the incorporation of micro- and nano-scale photonic device integration and photonic crystals (PCs), to enhance the extraction efficiency of UV light emitting diodes (LEDs). By inserting a high quality AlN epilayer that serves as a template for the subsequent growth of AlGaN alloys and adopting delta-doping scheme, we have greatly reduced the dislocation density and thereby enhanced the doping efficiency. By incorporating AlN and highly conductive n-AlGaN into the actual device structure, we have significantly improved the performance of deep UV LEDs (λ < 300 nm). It was shown that III-nitride PCs provide 3 times enhancement in output power and 4 times enhancement in modulation speed in UV LEDs. The demonstration of photonic band-gap (PBG) materials active in the UV and visible wavelengths opens many new applications.

Original languageEnglish
Title of host publication2005 Conference on Lasers and Electro-Optics, CLEO
Number of pages3
StatePublished - 2005
Event2005 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, United States
Duration: May 22 2005May 27 2005

Publication series

Name2005 Conference on Lasers and Electro-Optics, CLEO


Conference2005 Conference on Lasers and Electro-Optics, CLEO
Country/TerritoryUnited States
CityBaltimore, MD


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