Abstract
The fabrication of 340 nm UV light emitting diodes (LED) based on InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition was discussed. The enhanced LED structural quality and emission efficiency was demonstrated by employing δ doping in the n and p-type layers. The LEDs were found to have output powers of 150 μW at a dc driving current of 100 mA and 1.6 mW at a pulsed driving current of 1000 mA.
Original language | English |
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Pages (from-to) | 566-568 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 3 |
DOIs | |
State | Published - Jul 21 2003 |