Iii-nitride ultraviolet light-emitting diodes with delta doping

K. H. Kim, J. Li, S. X. Jin, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticle

62 Scopus citations

Abstract

The fabrication of 340 nm UV light emitting diodes (LED) based on InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition was discussed. The enhanced LED structural quality and emission efficiency was demonstrated by employing δ doping in the n and p-type layers. The LEDs were found to have output powers of 150 μW at a dc driving current of 100 mA and 1.6 mW at a pulsed driving current of 1000 mA.

Original languageEnglish
Pages (from-to)566-568
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number3
DOIs
StatePublished - Jul 21 2003

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