Iii-nitride ultraviolet light-emitting diodes with delta doping

K. H. Kim; J. Li; S. X. Jin; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1593212

Iii-nitride ultraviolet light-emitting diodes with delta doping

K. H. Kim, J. Li, S. X. Jin, J. Y. Lin, H. X. Jiang

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

The fabrication of 340 nm UV light emitting diodes (LED) based on InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition was discussed. The enhanced LED structural quality and emission efficiency was demonstrated by employing δ doping in the n and p-type layers. The LEDs were found to have output powers of 150 μW at a dc driving current of 100 mA and 1.6 mW at a pulsed driving current of 1000 mA.

Original language	English
Pages (from-to)	566-568
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	3
DOIs	https://doi.org/10.1063/1.1593212
State	Published - Jul 21 2003

Access to Document

10.1063/1.1593212

Cite this

@article{0eeb3b61b2c44bfb95c5dde6ede431bc,

title = "Iii-nitride ultraviolet light-emitting diodes with delta doping",

abstract = "The fabrication of 340 nm UV light emitting diodes (LED) based on InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition was discussed. The enhanced LED structural quality and emission efficiency was demonstrated by employing δ doping in the n and p-type layers. The LEDs were found to have output powers of 150 μW at a dc driving current of 100 mA and 1.6 mW at a pulsed driving current of 1000 mA.",

author = "Kim, {K. H.} and J. Li and Jin, {S. X.} and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2003",

month = jul,

day = "21",

doi = "10.1063/1.1593212",

language = "English",

volume = "83",

pages = "566--568",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "3",

}

TY - JOUR

T1 - Iii-nitride ultraviolet light-emitting diodes with delta doping

AU - Kim, K. H.

AU - Li, J.

AU - Jin, S. X.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2003/7/21

Y1 - 2003/7/21

N2 - The fabrication of 340 nm UV light emitting diodes (LED) based on InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition was discussed. The enhanced LED structural quality and emission efficiency was demonstrated by employing δ doping in the n and p-type layers. The LEDs were found to have output powers of 150 μW at a dc driving current of 100 mA and 1.6 mW at a pulsed driving current of 1000 mA.

AB - The fabrication of 340 nm UV light emitting diodes (LED) based on InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition was discussed. The enhanced LED structural quality and emission efficiency was demonstrated by employing δ doping in the n and p-type layers. The LEDs were found to have output powers of 150 μW at a dc driving current of 100 mA and 1.6 mW at a pulsed driving current of 1000 mA.

UR - http://www.scopus.com/inward/record.url?scp=0043128525&partnerID=8YFLogxK

U2 - 10.1063/1.1593212

DO - 10.1063/1.1593212

M3 - Article

AN - SCOPUS:0043128525

SN - 0003-6951

VL - 83

SP - 566

EP - 568

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Iii-nitride ultraviolet light-emitting diodes with delta doping

Abstract

Access to Document

Other files and links

Fingerprint

Cite this