III-nitride short period superlattices for deep UV light emitters

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Abstract

III-Nitride short period superlattices (SPSLs), whose period does not exceed ~2 nm (~8 monolayers), have a few unique properties allowing engineering of light-emitting devices emitting in deep UV range of wavelengths with significant reduction of dislocation density in the active layer. Such SPSLs can be grown using both molecular beam epitaxy and metal organic chemical vapor deposition approaches. Of the two growth methods, the former is discussed in more detail in this review. The electrical and optical properties of such SPSLs, as well as the design and fabrication of deep UV light-emitting devices based on these materials, are described and discussed.

Original languageEnglish
Article number2362
JournalApplied Sciences (Switzerland)
Volume8
Issue number12
DOIs
StatePublished - Nov 23 2018

Keywords

  • III-nitrides
  • Light emitters
  • Short period superlattices

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