Photonic devices based on III-nitrides offer benefits such as UV/blue emission, large band offsets of InN/GaN/AlN heterostructures allowing novel quantum well (QW) device design, and inherently high-emission efficiencies. Furthermore, due to their mechanical harness and larger band gaps, III-nitride-based devices may operate at much higher temperatures and voltages/power levels for any dimensional configuration and in harsher environments than other semiconductor devices and are said to proivde much lower temperature sensitivities. As such, these presented crucial advantages for many applications.
|Number of pages||53|
|Journal||Critical Reviews in Solid State and Materials Sciences|
|State||Published - 2003|