We report the nanofabrication and characterization of triangular lattice array of photonic crystals (PCs) with diameter/periodicity as small as 100/180 nm on Hi-nitride Light Emitting Diodes (LEDs) using electron beam lithography and inductively-coupled-plasma dry etching. Under optical pumping, a maximum enhancement factor of 20 was obtained from the PCs for emission light intensity at the wavelength of 475 nm at room temperature. Under current injection, the total power at 20 mA of 300 × 300 μm22 unpackaged LED chips revealed an increase by 63% and 95% for 460 nm blue and 340 nm UV LEDs, respectively, as a result of the PC formation. Our results show that the fabrication of PCs enhances the power output significantly on the III-nitride LEDs, which currently have very low external quantum efficiency especially in the UV range.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 2003|
|Event||GaN and Related Alloys - 2003 - Boston, MA, United States|
Duration: Dec 1 2003 → Dec 5 2003