Abstract
A study was performed on III-nitride photonic crystals. The achievement of nanofabrication and characterization of a triangular lattice array of photonic crystals (PC) with diameter/periodicity as small as 100/180 nm on an InGaN/GaN multiple quantum well was reported. The inductively coupled plasma dry etching and electron-beam lithography techniques were used for the purpose.
Original language | English |
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Pages (from-to) | 1231-1233 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 6 |
DOIs | |
State | Published - Aug 11 2003 |