III-Nitride full-scale high-resolution microdisplays

Jacob Day; J. Li; D. Y.C. Lie; Charles Bradford; J. Y. Lin; H. X. Jiang

doi:10.1063/1.3615679

III-Nitride full-scale high-resolution microdisplays

Jacob Day, J. Li, D. Y.C. Lie, Charles Bradford, J. Y. Lin, H. X. Jiang

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208 Scopus citations

Abstract

We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes (μLEDs) capable of delivering video graphics images. The luminance level of III-nitride microdisplays is several orders of magnitude higher than those of liquid crystal and organic-LED displays. The pixel emission intensity was almost constant over an operational temperature range from 100 to -100 °C. The outstanding performance is a direct attribute of III-nitride semiconductors. An energy efficient active drive scheme is accomplished by hybrid integration between μLED arrays and Si CMOS (complementary metal-oxide-semiconductor) active matrix integrated circuits. These integrated devices could play important roles in emerging fields such as biophotonics and optogenetics, as well as ultra-portable products such as next generation pico-projectors.

Original language	English
Article number	031116
Journal	Applied Physics Letters
Volume	99
Issue number	3
DOIs	https://doi.org/10.1063/1.3615679
State	Published - Jul 18 2011

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title = "III-Nitride full-scale high-resolution microdisplays",

abstract = "We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes (μLEDs) capable of delivering video graphics images. The luminance level of III-nitride microdisplays is several orders of magnitude higher than those of liquid crystal and organic-LED displays. The pixel emission intensity was almost constant over an operational temperature range from 100 to -100 °C. The outstanding performance is a direct attribute of III-nitride semiconductors. An energy efficient active drive scheme is accomplished by hybrid integration between μLED arrays and Si CMOS (complementary metal-oxide-semiconductor) active matrix integrated circuits. These integrated devices could play important roles in emerging fields such as biophotonics and optogenetics, as well as ultra-portable products such as next generation pico-projectors.",

author = "Jacob Day and J. Li and Lie, {D. Y.C.} and Charles Bradford and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: This work is supported by ARMY contract No. W909MY-09-C-0014. We thank Sixuan Jin and Weiping Zhao for their skillful help with lithography and device processing. We gratefully acknowledge useful discussions with Zhaoyang Fan. Lin and Jiang are grateful to the AT&T Foundation for the support of Ed Whitacre and Linda Whitacre Endowed chairs.",

year = "2011",

month = jul,

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doi = "10.1063/1.3615679",

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volume = "99",

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AU - Day, Jacob

AU - Li, J.

AU - Lie, D. Y.C.

AU - Bradford, Charles

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: This work is supported by ARMY contract No. W909MY-09-C-0014. We thank Sixuan Jin and Weiping Zhao for their skillful help with lithography and device processing. We gratefully acknowledge useful discussions with Zhaoyang Fan. Lin and Jiang are grateful to the AT&T Foundation for the support of Ed Whitacre and Linda Whitacre Endowed chairs.

PY - 2011/7/18

Y1 - 2011/7/18

N2 - We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes (μLEDs) capable of delivering video graphics images. The luminance level of III-nitride microdisplays is several orders of magnitude higher than those of liquid crystal and organic-LED displays. The pixel emission intensity was almost constant over an operational temperature range from 100 to -100 °C. The outstanding performance is a direct attribute of III-nitride semiconductors. An energy efficient active drive scheme is accomplished by hybrid integration between μLED arrays and Si CMOS (complementary metal-oxide-semiconductor) active matrix integrated circuits. These integrated devices could play important roles in emerging fields such as biophotonics and optogenetics, as well as ultra-portable products such as next generation pico-projectors.

AB - We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes (μLEDs) capable of delivering video graphics images. The luminance level of III-nitride microdisplays is several orders of magnitude higher than those of liquid crystal and organic-LED displays. The pixel emission intensity was almost constant over an operational temperature range from 100 to -100 °C. The outstanding performance is a direct attribute of III-nitride semiconductors. An energy efficient active drive scheme is accomplished by hybrid integration between μLED arrays and Si CMOS (complementary metal-oxide-semiconductor) active matrix integrated circuits. These integrated devices could play important roles in emerging fields such as biophotonics and optogenetics, as well as ultra-portable products such as next generation pico-projectors.

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SN - 0003-6951

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III-Nitride full-scale high-resolution microdisplays

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