III-Nitride full-scale high-resolution microdisplays

Jacob Day; J. Li; D. Y.C. Lie; Charles Bradford; J. Y. Lin; H. X. Jiang

doi:10.1063/1.3615679

III-Nitride full-scale high-resolution microdisplays

Jacob Day, J. Li, D. Y.C. Lie, Charles Bradford, J. Y. Lin, H. X. Jiang

Research output: Contribution to journal › Article

147 Scopus citations

Abstract

We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes (μLEDs) capable of delivering video graphics images. The luminance level of III-nitride microdisplays is several orders of magnitude higher than those of liquid crystal and organic-LED displays. The pixel emission intensity was almost constant over an operational temperature range from 100 to -100 °C. The outstanding performance is a direct attribute of III-nitride semiconductors. An energy efficient active drive scheme is accomplished by hybrid integration between μLED arrays and Si CMOS (complementary metal-oxide-semiconductor) active matrix integrated circuits. These integrated devices could play important roles in emerging fields such as biophotonics and optogenetics, as well as ultra-portable products such as next generation pico-projectors.

Original language	English
Article number	031116
Journal	Applied Physics Letters
Volume	99
Issue number	3
DOIs	https://doi.org/10.1063/1.3615679
State	Published - Jul 18 2011

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Day, J., Li, J., Lie, D. Y. C., Bradford, C., Lin, J. Y., & Jiang, H. X. (2011). III-Nitride full-scale high-resolution microdisplays. Applied Physics Letters, 99(3), [031116]. https://doi.org/10.1063/1.3615679

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