III-nitride blue microdisplays

H. X. Jiang, S. X. Jin, J. Li, J. Shakya, J. Y. Lin

Research output: Contribution to journalArticle

196 Scopus citations

Abstract

Prototype blue microdisplays have been fabricated from InGaN/GaN quantum wells. The device has a dimension of 0.5 × 0.5 mm2 and consists of 10× 10 pixels 12 μm in diameter. Emission properties such as electroluminescence spectra, output power versus forward current (L-I) characteristic, viewing angle, and uniformity have been measured. Due to the unique properties of III-nitride wide-band-gap semiconductors, microdisplays fabricated from III nitrides can potentially provide unsurpassed performance, including high-brightness/resolution/contrast, high-temperature/ high-power operation, high shock resistance, wide viewing angles, full-color spectrum capability, long life, high speed, and low-power consumption, thus providing an enhancement and benefit to the present capabilities of miniature display systems.

Original languageEnglish
Pages (from-to)1303-1305
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number9
DOIs
StatePublished - Feb 26 2001

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