III-nitride blue and ultraviolet photonic crystal light emitting diodes

T. N. Oder; K. H. Kim; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1644050

III-nitride blue and ultraviolet photonic crystal light emitting diodes

T. N. Oder, K. H. Kim, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

360 Scopus citations

Abstract

The enhancement of the external efficiency of III-nitride light emitting diodes (LED) using photonic crystals (PC) under current injection was studied. Electron-beam lithography and inductively coupled plasma dry etching were used to pattern triangular arrays of the PCs with diameter/periodicity of 300/700 nm. Metalorganic chemical vapor deposition (MOCVD) was used to grow III-nitride materials on sapphire substrates. The results show that the total power at 20 mA of 300×300 μm ² unpackaged LED chips revealed an increase by 63% and 95% for the blue and UV LEDs.

Original language	English
Pages (from-to)	466-468
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	4
DOIs	https://doi.org/10.1063/1.1644050
State	Published - Jan 26 2004

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title = "III-nitride blue and ultraviolet photonic crystal light emitting diodes",

abstract = "The enhancement of the external efficiency of III-nitride light emitting diodes (LED) using photonic crystals (PC) under current injection was studied. Electron-beam lithography and inductively coupled plasma dry etching were used to pattern triangular arrays of the PCs with diameter/periodicity of 300/700 nm. Metalorganic chemical vapor deposition (MOCVD) was used to grow III-nitride materials on sapphire substrates. The results show that the total power at 20 mA of 300×300 μm 2 unpackaged LED chips revealed an increase by 63% and 95% for the blue and UV LEDs.",

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AU - Oder, T. N.

AU - Kim, K. H.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2004/1/26

Y1 - 2004/1/26

N2 - The enhancement of the external efficiency of III-nitride light emitting diodes (LED) using photonic crystals (PC) under current injection was studied. Electron-beam lithography and inductively coupled plasma dry etching were used to pattern triangular arrays of the PCs with diameter/periodicity of 300/700 nm. Metalorganic chemical vapor deposition (MOCVD) was used to grow III-nitride materials on sapphire substrates. The results show that the total power at 20 mA of 300×300 μm 2 unpackaged LED chips revealed an increase by 63% and 95% for the blue and UV LEDs.

AB - The enhancement of the external efficiency of III-nitride light emitting diodes (LED) using photonic crystals (PC) under current injection was studied. Electron-beam lithography and inductively coupled plasma dry etching were used to pattern triangular arrays of the PCs with diameter/periodicity of 300/700 nm. Metalorganic chemical vapor deposition (MOCVD) was used to grow III-nitride materials on sapphire substrates. The results show that the total power at 20 mA of 300×300 μm 2 unpackaged LED chips revealed an increase by 63% and 95% for the blue and UV LEDs.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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III-nitride blue and ultraviolet photonic crystal light emitting diodes

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