III-nitride blue and ultraviolet photonic crystal light emitting diodes

T. N. Oder, K. H. Kim, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticlepeer-review

346 Scopus citations

Abstract

The enhancement of the external efficiency of III-nitride light emitting diodes (LED) using photonic crystals (PC) under current injection was studied. Electron-beam lithography and inductively coupled plasma dry etching were used to pattern triangular arrays of the PCs with diameter/periodicity of 300/700 nm. Metalorganic chemical vapor deposition (MOCVD) was used to grow III-nitride materials on sapphire substrates. The results show that the total power at 20 mA of 300×300 μm 2 unpackaged LED chips revealed an increase by 63% and 95% for the blue and UV LEDs.

Original languageEnglish
Pages (from-to)466-468
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number4
DOIs
StatePublished - Jan 26 2004

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