Identification of the donor and acceptor states of the bond-centered hydrogen-carbon pair in Si and diluted SiGe alloys

R. Stübner; Vl Kolkovsky; J. Weber; N. V. Abrosimov; C. M. Stanley; D. J. Backlund; S. K. Estreicher

doi:10.1063/1.5135757

Identification of the donor and acceptor states of the bond-centered hydrogen-carbon pair in Si and diluted SiGe alloys

R. Stübner, Vl Kolkovsky, J. Weber, N. V. Abrosimov, C. M. Stanley, D. J. Backlund, S. K. Estreicher

Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The electrical and structural properties of two levels (E90 and H180) in diluted n- and p-type Si_{1 - x}Ge_x alloys (0 ≤ x ≤ 0.070) are investigated by high-resolution Laplace deep level transient spectroscopy measurements and first-principles calculations. By exploiting the presence of Ge atoms close to a substitutional C atom, we show that E90 and H180 belong to the same C-H pair (labeled CH_1BC) with H in a bond-centered configuration (C - H_BC - Si). The relative energies of the various configurations of the CH pair are calculated, and the complete vibrational spectra in the lowest-energy structures for each charge state are predicted.

Original language	English
Article number	045701
Journal	Journal of Applied Physics
Volume	127
Issue number	4
DOIs	https://doi.org/10.1063/1.5135757
State	Published - Jan 31 2020

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@article{7de089b1b71d490ba88e5f9bee649617,

title = "Identification of the donor and acceptor states of the bond-centered hydrogen-carbon pair in Si and diluted SiGe alloys",

abstract = "The electrical and structural properties of two levels (E90 and H180) in diluted n- and p-type Si1 - xGex alloys (0 ≤ x ≤ 0.070) are investigated by high-resolution Laplace deep level transient spectroscopy measurements and first-principles calculations. By exploiting the presence of Ge atoms close to a substitutional C atom, we show that E90 and H180 belong to the same C-H pair (labeled CH1BC) with H in a bond-centered configuration (C - HBC - Si). The relative energies of the various configurations of the CH pair are calculated, and the complete vibrational spectra in the lowest-energy structures for each charge state are predicted.",

author = "R. St{\"u}bner and Vl Kolkovsky and J. Weber and Abrosimov, {N. V.} and Stanley, {C. M.} and Backlund, {D. J.} and Estreicher, {S. K.}",

note = "Publisher Copyright: {\textcopyright} 2020 Author(s).",

year = "2020",

month = jan,

day = "31",

doi = "10.1063/1.5135757",

language = "English",

volume = "127",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "4",

}

TY - JOUR

T1 - Identification of the donor and acceptor states of the bond-centered hydrogen-carbon pair in Si and diluted SiGe alloys

AU - Stübner, R.

AU - Kolkovsky, Vl

AU - Weber, J.

AU - Abrosimov, N. V.

AU - Stanley, C. M.

AU - Backlund, D. J.

AU - Estreicher, S. K.

PY - 2020/1/31

Y1 - 2020/1/31

N2 - The electrical and structural properties of two levels (E90 and H180) in diluted n- and p-type Si1 - xGex alloys (0 ≤ x ≤ 0.070) are investigated by high-resolution Laplace deep level transient spectroscopy measurements and first-principles calculations. By exploiting the presence of Ge atoms close to a substitutional C atom, we show that E90 and H180 belong to the same C-H pair (labeled CH1BC) with H in a bond-centered configuration (C - HBC - Si). The relative energies of the various configurations of the CH pair are calculated, and the complete vibrational spectra in the lowest-energy structures for each charge state are predicted.

AB - The electrical and structural properties of two levels (E90 and H180) in diluted n- and p-type Si1 - xGex alloys (0 ≤ x ≤ 0.070) are investigated by high-resolution Laplace deep level transient spectroscopy measurements and first-principles calculations. By exploiting the presence of Ge atoms close to a substitutional C atom, we show that E90 and H180 belong to the same C-H pair (labeled CH1BC) with H in a bond-centered configuration (C - HBC - Si). The relative energies of the various configurations of the CH pair are calculated, and the complete vibrational spectra in the lowest-energy structures for each charge state are predicted.

UR - http://www.scopus.com/inward/record.url?scp=85078707226&partnerID=8YFLogxK

U2 - 10.1063/1.5135757

DO - 10.1063/1.5135757

M3 - Article

AN - SCOPUS:85078707226

SN - 0021-8979

VL - 127

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 045701

ER -

Identification of the donor and acceptor states of the bond-centered hydrogen-carbon pair in Si and diluted SiGe alloys

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