Identification of the donor and acceptor states of the bond-centered hydrogen-carbon pair in Si and diluted SiGe alloys

R. Stübner, Vl Kolkovsky, J. Weber, N. V. Abrosimov, C. M. Stanley, D. J. Backlund, S. K. Estreicher

Research output: Contribution to journalArticlepeer-review

Abstract

The electrical and structural properties of two levels (E90 and H180) in diluted n- and p-type Si1 - xGex alloys (0 ≤ x ≤ 0.070) are investigated by high-resolution Laplace deep level transient spectroscopy measurements and first-principles calculations. By exploiting the presence of Ge atoms close to a substitutional C atom, we show that E90 and H180 belong to the same C-H pair (labeled CH1BC) with H in a bond-centered configuration (C - HBC - Si). The relative energies of the various configurations of the CH pair are calculated, and the complete vibrational spectra in the lowest-energy structures for each charge state are predicted.

Original languageEnglish
Article number045701
JournalJournal of Applied Physics
Volume127
Issue number4
DOIs
StatePublished - Jan 31 2020

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