TY - JOUR
T1 - Hydrogen in silicon
T2 - A discussion of diffusion and passivation mechanisms
AU - Sopori, B. L.
AU - Deng, X.
AU - Benner, J. P.
AU - Rohatgi, A.
AU - Sana, P.
AU - Estreicher, S. K.
AU - Park, Y. K.
AU - Roberson, M. A.
N1 - Funding Information:
The authors would like to thank Robert Reedy and Sally Asher for SIMS analyses, and Prof. S. Ashok of Pennsylvania State University for ECR hydrogenation. The PAS analyses were performed at University of Texas by Prof. S. Sharma. This work was supported by the US Department of Energy under contract No. DE-AC02-83CH10093. The work of SKE was supported in part by the grant D-1126 from R.A. Welch Foundation.
PY - 1996/6
Y1 - 1996/6
N2 - A model for H diffusion and passivation is described that explains the experimental results from solar cell passivation, such as variations in the degree of passivation in substrates from different vendors, passivation due to forming gas anneals following Al alloying, and the effects of plasma enhanced chemical vapor deposition (PECVD) nitridation. Two major features of the model are inclusion of (i) a new H diffusion mechanism involving hydrogen-vacancy complex {V-H} formation, and (ii) surface damage that causes high solubity of H at the Si surface and dissociation of molecular H at low temperatures. The theoretical analysis, based on static potential energy surfaces at the ab-initio Hatree-Fock level, identifies some details of diffusion mechanisms.
AB - A model for H diffusion and passivation is described that explains the experimental results from solar cell passivation, such as variations in the degree of passivation in substrates from different vendors, passivation due to forming gas anneals following Al alloying, and the effects of plasma enhanced chemical vapor deposition (PECVD) nitridation. Two major features of the model are inclusion of (i) a new H diffusion mechanism involving hydrogen-vacancy complex {V-H} formation, and (ii) surface damage that causes high solubity of H at the Si surface and dissociation of molecular H at low temperatures. The theoretical analysis, based on static potential energy surfaces at the ab-initio Hatree-Fock level, identifies some details of diffusion mechanisms.
UR - http://www.scopus.com/inward/record.url?scp=0030169785&partnerID=8YFLogxK
U2 - 10.1016/0927-0248(95)00098-4
DO - 10.1016/0927-0248(95)00098-4
M3 - Article
AN - SCOPUS:0030169785
SN - 0927-0248
VL - 41-42
SP - 159
EP - 169
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
ER -