Hydrogen in Si and Ge

Stefan K. Estreicher, Michael Stavola, Jörg Weber

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

8 Scopus citations

Abstract

This review of hydrogen begins with a survey of the fundamental properties of H in Si and Ge: diffusivity, solubility, equilibrium sites, electrical activity, and vibrational properties. Hydrogen is best known for its ability to change the electrical properties in semiconductors by forming covalent bonds with defects or with host atoms adjacent to them. This affects the position of the electrically active levels.

Original languageEnglish
Title of host publicationSilicon, Germanium, and Their Alloys
Subtitle of host publicationGrowth, Defects, Impurities, and Nanocrystals
PublisherCRC Press
Pages217-254
Number of pages38
ISBN (Electronic)9781466586659
ISBN (Print)9781466586642
DOIs
StatePublished - Jan 1 2014

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