Abstract
Photoelectrochemical effects in p- Inx Ga1-xN (0x0.22) alloys have been investigated. Hydrogen generation was observed in p-InGaN semiconducting electrodes under white light illumination with additional bias. It was found that p-InGaN alloys possess much higher conversion efficiencies than p-GaN. Time dependent photocurrent density characteristics showed that the stability of p-InGaN in aqueous HBr is excellent. The photocurrent density was found to increase almost linearly with hole mobility and excitation light intensity.
Original language | English |
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Article number | 052110 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 5 |
DOIs | |
State | Published - 2010 |