High brightness colored LEDs based on InGaN multiple quantum wells have recently been an attractive topic of research to achieve high efficiency photonic devices. In this study, we investigated a 3-period InxGa1−xN/GaN multiple quantum well LED grown on special templates by metal-organic chemical vapor deposition. All epitaxial layers, including the InGaN/GaN multiple quantum well active region, n-GaN and p-GaN were realized using nitrogen alone as a carrier gas. The growth details and device fabrication steps were studied. High resolution X-ray diffraction was used to analyze the thickness of the barrier and well, and composition of indium in the multiple quantum well active region. The Hall effect measurements were used to analyze the electrical properties of the epitaxial layers. Electroluminescence measurements were performed to estimate the optical band-gap of the LED structure.