Hydrogen enhancement of silicon thermal donor formation

C. D. Lamp; D. J. James

doi:10.1063/1.109485

Hydrogen enhancement of silicon thermal donor formation

C. D. Lamp, D. J. James

Physics

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14 Scopus citations

Abstract

Oxygen-related thermal donor formation in Czochralski silicon is characterized by the capacitance-voltage and deep level transient spectroscopy techniques as a function of 450°C anneal time following hydrogenation. Increases in the formation rate and number of thermal donor (TD) defects found after hydrogenation are reported. This study finds an increase in TD ^+/++ concentration in the near-surface region at short anneal times, but at longer times an elevated concentration was not observed. No acceleration through the sequence of thermal donor defects was detected. This fails to support the model of hydrogen lowering the barrier to oxygen diffusion and accelerating the TD_n→TD_n+1 transitions. This study does, however, support a model in which the hydrogen increases the available thermal donor core sites.

Original language	English
Pages (from-to)	2081-2083
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	17
DOIs	https://doi.org/10.1063/1.109485
State	Published - 1993

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title = "Hydrogen enhancement of silicon thermal donor formation",

abstract = "Oxygen-related thermal donor formation in Czochralski silicon is characterized by the capacitance-voltage and deep level transient spectroscopy techniques as a function of 450°C anneal time following hydrogenation. Increases in the formation rate and number of thermal donor (TD) defects found after hydrogenation are reported. This study finds an increase in TD +/++ concentration in the near-surface region at short anneal times, but at longer times an elevated concentration was not observed. No acceleration through the sequence of thermal donor defects was detected. This fails to support the model of hydrogen lowering the barrier to oxygen diffusion and accelerating the TDn→TDn+1 transitions. This study does, however, support a model in which the hydrogen increases the available thermal donor core sites.",

author = "Lamp, {C. D.} and James, {D. J.}",

year = "1993",

doi = "10.1063/1.109485",

language = "English",

volume = "62",

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journal = "Applied Physics Letters",

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T1 - Hydrogen enhancement of silicon thermal donor formation

AU - Lamp, C. D.

AU - James, D. J.

PY - 1993

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N2 - Oxygen-related thermal donor formation in Czochralski silicon is characterized by the capacitance-voltage and deep level transient spectroscopy techniques as a function of 450°C anneal time following hydrogenation. Increases in the formation rate and number of thermal donor (TD) defects found after hydrogenation are reported. This study finds an increase in TD +/++ concentration in the near-surface region at short anneal times, but at longer times an elevated concentration was not observed. No acceleration through the sequence of thermal donor defects was detected. This fails to support the model of hydrogen lowering the barrier to oxygen diffusion and accelerating the TDn→TDn+1 transitions. This study does, however, support a model in which the hydrogen increases the available thermal donor core sites.

AB - Oxygen-related thermal donor formation in Czochralski silicon is characterized by the capacitance-voltage and deep level transient spectroscopy techniques as a function of 450°C anneal time following hydrogenation. Increases in the formation rate and number of thermal donor (TD) defects found after hydrogenation are reported. This study finds an increase in TD +/++ concentration in the near-surface region at short anneal times, but at longer times an elevated concentration was not observed. No acceleration through the sequence of thermal donor defects was detected. This fails to support the model of hydrogen lowering the barrier to oxygen diffusion and accelerating the TDn→TDn+1 transitions. This study does, however, support a model in which the hydrogen increases the available thermal donor core sites.

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U2 - 10.1063/1.109485

DO - 10.1063/1.109485

M3 - Article

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SN - 0003-6951

VL - 62

SP - 2081

EP - 2083

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Hydrogen enhancement of silicon thermal donor formation

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