How can we RF IC designers benefit from Si/SiGe HBTs? From device physics to practical RF IC designs

D. Y.C. Lie, Xiaojuen Yuan

Research output: Contribution to conferencePaperpeer-review

Abstract

This paper is an up-to-date brief review on why the Si/SiGe technology is critically beneficial to us RF IC designers and to the advancement of the entire RF IC industry, as it is getting dominance for applications ranging from highly integrated wireless communication ICs to high-speed digital fiber-optic transceiver chips.

Original languageEnglish
Pages5-9
Number of pages5
StatePublished - 2001
Event9th International Symposium on Integrated Circuits, Devices and Systems, ISIC 2001: Proceedings - Low Power and Low Voltage Integrated Systems - Singapore, Singapore
Duration: Sep 3 2001Sep 5 2001

Conference

Conference9th International Symposium on Integrated Circuits, Devices and Systems, ISIC 2001: Proceedings - Low Power and Low Voltage Integrated Systems
CountrySingapore
CitySingapore
Period09/3/0109/5/01

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