TY - GEN
T1 - Highly-Efficient Broadband Millimeter-Wave 5G Power Amplifiers in GaN, SiGe, and CMOS-SOI
AU - Lie, Donald Y.C.
AU - Mayeda, Jill C.
AU - Lopez, Jerry
N1 - Funding Information:
Acknowledgment This material is based on research sponsored by Air Force Research Laboratory (AFRL) and Defense Advanced Research Projects Agency (DARPA) under Grant Number FA8650-19-1-7902. The US Government is authorized to reproduce and distribute reprints for governmental purposes notwithstanding any copyright notation thereon. We also thank TTU Keh-Shew Lu Regents Chair Endowment and GF’s University Program.
Publisher Copyright:
© 2020 IEEE.
PY - 2020/9
Y1 - 2020/9
N2 - We present several broadband high-efficient power amplifier (PA) designs for potential millimeter-wave (mm-Wave) 5G (5th Generation) applications. The PA is targeted to cover the key part of 5G FR2 band (i.e., 24.25 to 43.5 GHz), with P{OUT, MAX} ≥ 16 dBm and peak power-Added-efficiency (PAE) above 30%. We use advanced mm-Wave IC technologies in 40 nm GaN, 22 nm CMOS FD-SOI, and 90 nm SiGe BiCMOS processes to prototype medium-power mm-Wave 5G PAs. Post-layout simulations and preliminary measurement data indicates the PAs should be able to meet the performance targets, and there are design trade-offs on P{OUT, MAX} and PAE due to different device technologies, circuit topologies (differential, cascode), biasing, matching network, etc.
AB - We present several broadband high-efficient power amplifier (PA) designs for potential millimeter-wave (mm-Wave) 5G (5th Generation) applications. The PA is targeted to cover the key part of 5G FR2 band (i.e., 24.25 to 43.5 GHz), with P{OUT, MAX} ≥ 16 dBm and peak power-Added-efficiency (PAE) above 30%. We use advanced mm-Wave IC technologies in 40 nm GaN, 22 nm CMOS FD-SOI, and 90 nm SiGe BiCMOS processes to prototype medium-power mm-Wave 5G PAs. Post-layout simulations and preliminary measurement data indicates the PAs should be able to meet the performance targets, and there are design trade-offs on P{OUT, MAX} and PAE due to different device technologies, circuit topologies (differential, cascode), biasing, matching network, etc.
KW - 5G
KW - Broadband Power Amplifier (PA)
KW - CMOS SOI
KW - GaN
KW - High efficiency
KW - Millimeter-Wave (mm-Wave)
KW - Phased-Array
UR - http://www.scopus.com/inward/record.url?scp=85096514592&partnerID=8YFLogxK
U2 - 10.1109/RFIT49453.2020.9226215
DO - 10.1109/RFIT49453.2020.9226215
M3 - Conference contribution
AN - SCOPUS:85096514592
T3 - 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
SP - 169
EP - 171
BT - 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 2 September 2020 through 4 September 2020
ER -