Highly-Efficient Broadband Millimeter-Wave 5G Power Amplifiers in GaN, SiGe, and CMOS-SOI

Donald Y.C. Lie, Jill C. Mayeda, Jerry Lopez

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present several broadband high-efficient power amplifier (PA) designs for potential millimeter-wave (mm-Wave) 5G (5th Generation) applications. The PA is targeted to cover the key part of 5G FR2 band (i.e., 24.25 to 43.5 GHz), with P{OUT, MAX} ≥ 16 dBm and peak power-Added-efficiency (PAE) above 30%. We use advanced mm-Wave IC technologies in 40 nm GaN, 22 nm CMOS FD-SOI, and 90 nm SiGe BiCMOS processes to prototype medium-power mm-Wave 5G PAs. Post-layout simulations and preliminary measurement data indicates the PAs should be able to meet the performance targets, and there are design trade-offs on P{OUT, MAX} and PAE due to different device technologies, circuit topologies (differential, cascode), biasing, matching network, etc.

Original languageEnglish
Title of host publication2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages169-171
Number of pages3
ISBN (Electronic)9781728165066
DOIs
StatePublished - Sep 2020
Event2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 - Hiroshima, Japan
Duration: Sep 2 2020Sep 4 2020

Publication series

Name2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020

Conference

Conference2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
Country/TerritoryJapan
CityHiroshima
Period09/2/2009/4/20

Keywords

  • 5G
  • Broadband Power Amplifier (PA)
  • CMOS SOI
  • GaN
  • High efficiency
  • Millimeter-Wave (mm-Wave)
  • Phased-Array

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