@inproceedings{6f9080c945e3477f840a4aaefd4ae14d,
title = "Highly efficient and linear class E SiGe power amplifier design",
abstract = "This paper discusses the design of monolithic RF broadband Class E SiGe power amplifiers (PAs) that are highly efficient and linear. Load-pull measurement data on IBM 7HP SiGe power devices have been made at 900MHz and 2.4GHz and monolithic class E PAs have been designed using these devices to achieve highest power-added-efficiency (PAE) at these frequencies. It is found that high PAE can be achieved for monolithic single-stage Class E PAs designed using high-breakdown SiGe transistors at ∼65% (900MHz) and ∼40% (2.4GHz), respectively, which are roughly ∼10% lower than the device's maximum PAE values obtained by load-pull tests under optimal off-chip matching conditions. We have also demonstrated that monolithic SiGe class E PAs can be successfully linearized using an open-loop envelope tracking (ET) technique as their output spectra pass the stringent EDGE transmit mask with margins, achieving overall PAE of 44.4% for the linearized PA system that surpasses the <30% PAE with commercially available GaAs Class AB PAs for EDGE applications. These promising results indicate the feasibility of realizing true single-chip wireless transceivers with on-chip RF SiGe PAs for spectrally-efficient non-constant-envelope modulation schemes.",
author = "Lie, {Donald Y.C.} and Popp, {Jeremy D.} and Rowland, {Jason F.} and Yang, {Annie H.} and Feipeng Wang and Don Kimball",
year = "2006",
month = jan,
day = "1",
doi = "10.1109/ICSICT.2006.306278",
language = "English",
isbn = "1424401615",
series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
publisher = "IEEE Computer Society",
pages = "1526--1529",
booktitle = "ICSICT-2006",
note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",
}