Highly efficient and linear class E SiGe power amplifier design

Donald Y.C. Lie, Jeremy D. Popp, Jason F. Rowland, Annie H. Yang, Feipeng Wang, Don Kimball

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper discusses the design of monolithic RF broadband Class E SiGe power amplifiers (PAs) that are highly efficient and linear. Load-pull measurement data on IBM 7HP SiGe power devices have been made at 900MHz and 2.4GHz and monolithic class E PAs have been designed using these devices to achieve highest power-added-efficiency (PAE) at these frequencies. It is found that high PAE can be achieved for monolithic single-stage Class E PAs designed using high-breakdown SiGe transistors at ∼65% (900MHz) and ∼40% (2.4GHz), respectively, which are roughly ∼10% lower than the device's maximum PAE values obtained by load-pull tests under optimal off-chip matching conditions. We have also demonstrated that monolithic SiGe class E PAs can be successfully linearized using an open-loop envelope tracking (ET) technique as their output spectra pass the stringent EDGE transmit mask with margins, achieving overall PAE of 44.4% for the linearized PA system that surpasses the <30% PAE with commercially available GaAs Class AB PAs for EDGE applications. These promising results indicate the feasibility of realizing true single-chip wireless transceivers with on-chip RF SiGe PAs for spectrally-efficient non-constant-envelope modulation schemes.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages1526-1529
Number of pages4
ISBN (Print)1424401615, 9781424401611
DOIs
StatePublished - Jan 1 2006
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: Oct 23 2006Oct 26 2006

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period10/23/0610/26/06

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