SiC manufacturers are continually improving the purity of their wafers, however, interband impurities, while detrimental in many applications, can be useful in the operation of photoconductive switches. Compact, highvoltage photoconductive switches were fabricated using c-plane; vanadium doped 6H-SiC obtained from II-VI, Inc. This material incorporates a large amount of interband impurities that are compensated by the vanadium amphoteric, but at present is only available as c-plane wafers. In order to avoid micropipe defects, lateral switches were fabricated to allow validation of material simulations. Low resistivity contacts were formed on the semi-insulating material and a high-voltage encapsulant increases the surface flashover potential of the switch. Material characteristics were determined and switch parameters were simulated with comparisons made to experimental data.