High voltage photoconductive switches using semi-insulating, vanadium doped 6H-SiC

C. James, C. Hettler, J. Dickens

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

SiC manufacturers are continually improving the purity of their wafers, however, interband impurities, while detrimental in many applications, can be useful in the operation of photoconductive switches. Compact, highvoltage photoconductive switches were fabricated using c-plane; vanadium doped 6H-SiC obtained from II-VI, Inc. This material incorporates a large amount of interband impurities that are compensated by the vanadium amphoteric, but at present is only available as c-plane wafers. In order to avoid micropipe defects, lateral switches were fabricated to allow validation of material simulations. Low resistivity contacts were formed on the semi-insulating material and a high-voltage encapsulant increases the surface flashover potential of the switch. Material characteristics were determined and switch parameters were simulated with comparisons made to experimental data.

Original languageEnglish
Title of host publicationPPC2009 - 17th IEEE International Pulsed Power Conference
Pages283-286
Number of pages4
DOIs
StatePublished - 2009
Event17th IEEE International Pulsed Power Conference, PPC2009 - Washington, DC, United States
Duration: Jun 28 2009Jul 2 2009

Publication series

NamePPC2009 - 17th IEEE International Pulsed Power Conference

Conference

Conference17th IEEE International Pulsed Power Conference, PPC2009
CountryUnited States
CityWashington, DC
Period06/28/0907/2/09

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